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06N02C PDF Data sheet ( 特性 )

部品番号 06N02C
部品説明 N-Channel Enhancement Mode Power MOSFET
メーカ FNK
ロゴ FNK ロゴ 



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06N02C Datasheet, 06N02C PDF,ピン配置, 機能
FNK06N02C N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The FNK06N02Cuses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V.
ID = 50A
RDS(ON)< 7.5m@ VGS=4.5V
DS(ON)<10.0m@ VGS=2.5V
High Power and current handing capability
Lead free product is acquired
Schematic diagram
Application
Battery Switch
Load switch
Power management
Package Marking And Ordering Information
Device Marking
Device
Device Package
06N02C
FNK06N02C
TO-251
Reel Size
Tape width
Quantity
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC =25
Continuous Drain Current (TJ =150)
TC =70
TA =25
ID
TA =70
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
20
±12
50
20
20
15
80
50
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40 /W
Electrical Characteristics (TA=25unless otherwise noted)
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06N02C

N-Channel Enhancement Mode Power MOSFET

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