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Número de pieza | IRF7780MPbF | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF7780MPbF (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Benefits
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Lead-Free, RoHS Compliant
StrongIRFET™
IRF7780MTRPbF
DirectFET® N-Channel Power MOSFET
VDSS
RDS(on) typ.
max
ID
75V
4.5m
5.7m
89A
S
S
S
D
GS
S
S
ME
D
DirectFET® ISOMETRIC
Base part number
IRF7780MPbF
Package Type
DirectFET® ME
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF7780MTRPbF
15
ID = 53A
12
9
TJ = 125°C
6
3 TJ = 25°C
0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
100
80
60
40
20
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 2. Maximum Drain Current vs. Case Temperature
1 www.irf.com © 2015 International Rectifier
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June 4, 2015
1 page 1000
100
TJ = 150°C
10
TJ = 25°C
1
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0
VSD, Source-to-Drain Voltage (V)
1.2
Fig 9. Typical Source-Drain Diode Forward Voltage
90
Id = 1.0mA
88
86
84
82
80
78
76
74
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
8.0
Vgs = 5.5V
7.2
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
6.4 Vgs = 10V
IRF7780MTRPbF
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
1
10msec
0.1 Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1 1
DC
10
VDS, Drain-to-Source Voltage (V)
Fig 10. Maximum Safe Operating Area
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-10 0 10 20 30 40 50 60 70 80
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical Coss Stored Energy
5.6
4.8
4.0
5 www.irf.com
3.2
0 20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
© 2015 International Rectifier
Submit Datasheet Feedback
June 4, 2015
5 Page DirectFET® Tape & Reel Dimension (Showing component orientation).
IRF7780MTRPbF
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF7780MTRPBF). For 1000 parts on 7"
reel, order IRF7780MTR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
IMPERIAL
METRIC
IMPERIAL
CODE MIN MAX MIN MAX MIN MAX MIN MAX
A 330.0 N.C 12.992 N.C 177.77 N.C
6.9 N.C
B 20.2 N.C 0.795 N.C 19.06 N.C 0.75 N.C
C
12.8 13.2 0.504 0.520 13.5
12.8 0.53 0.50
D
1.5 N.C 0.059 N.C
1.5
N.C 0.059 N.C
E 100.0 N.C 3.937 N.C 58.72 N.C
2.31 N.C
F
N.C 18.4
N.C 0.724 N.C 13.50 N.C 0.53
G 12.4 14.4 0.488 0.567 11.9 12.01 0.47 N.C
H 11.9 15.4 0.469 0.606 11.9 12.01 0.47 N.C
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
METRIC
IMPERIAL
MIN MAX MIN MAX
7.90 8.10 0.311 0.319
3.90 4.10 0.154 0.161
11.90 12.30 0.469 0.484
5.45 5.55 0.215 0.219
5.10 5.30 0.201 0.209
6.50 6.70 0.256 0.264
1.50 N.C 0.059 N.C
1.50 1.60 0.059 0.063
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
June 4, 2015
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IRF7780MPbF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF7780MPbF | N-Channel Power MOSFET / Transistor | International Rectifier |
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