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IXBL64N250 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXBL64N250
部品説明 Monolithic Bipolar MOS Transistor
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXBL64N250 Datasheet, IXBL64N250 PDF,ピン配置, 機能
Advance Technical Information
High Voltage, High Gain
BiMOSFETTM
Monolithic Bipolar
MOS Transistor
IXBL64N250
VCES
IC110
VCE(sat)
=
=
2500V
46A
3.0V
(Electrically Isolated Tab)
ISOPLUS i5-PakTM
Symbol
VCES
VCGR
VGES
VGEM
IC25
IICCM110
SSOA
(RBSOA)
T(SSCC SOA)
PC
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
2500
2500
±25
±35
V
V
V
V
TC = 25°C
TTCC
= 110°C
= 25°C, 1ms
VGE= 15V, TVJ = 125°C, RG = 1Ω
Clamped Inductive Load
VRGGE
=
=
51Ω5V, ,VTCEJ
= 125°C
= 1250V,
Non-Repetitive
TC = 25°C
116
46
750
ICM = 160
VCE < 0.8 VCES
10
500
-55 ... +150
150
-55 ... +150
A
A
A
A
μs
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300 °C
260 °C
50/60Hz, 1 minute
2500
V~
Mounting Force with Clip
30..170 / 7..36 Nm/lb-in.
8g
GE
C
Isolated Tab
G = Gate
E = Emitter
C = Collector
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Mounting Surface
z 2500VElectrical Isolation
z High Blocking Voltage
z Low Switching Losses
z High Current Handling Capability
z Anti-Parallel Diode
Advantages
z High Power Density
z Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 1mA, VGE = 0V
VGE(th)
IC = 4mA, VCE = VGE
ICES VCE = 0.8 VCES, VGE = 0V
Note 2, TJ = 125°C
IGES VCE = 0V, VGE = ± 25V
VCE(sat)
IC = 64A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
2500
V
3.0 5.0 V
50 μA
6 mA
±200 nA
2.5 3.0 V
3.1 V
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z Uninterrupted Power Supplies (UPS)
z Capacitor Discharge Circuits
z Laser Generators
© 2010 IXYS CORPORATION, All Rights Reserved
DS100259(04/10)

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IXBL64N250

Monolithic Bipolar MOS Transistor

IXYS Corporation
IXYS Corporation

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