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IRFB4115GPbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFB4115GPbF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB4115GPbFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD - 96216
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
IRFB4115GPbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
S ID (Silicon Limited)
150V
9.3mΩ
11mΩ
104A
D
DS
G
TO-220AB
IRFB4115GPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
dSingle Pulse Avalanche Energy
ÃAvalanche Current
Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
iJunction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
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G
Gate
D
Drain
S
Source
Max.
104
74
420
380
2.5
± 20
18
-55 to + 175
300
x x10lbf in (1.1N m)
220
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.40
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
01/06/09
1 Page 1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
10
1
0.1
0.1
5.0V
≤60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100 TJ = 175°C
10 TJ = 25°C
1
VDS = 50V
≤60µs PULSE WIDTH
0.1
2 4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
10
1
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
IRFB4115GPbF
5.0V
10
1
0.1
≤60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
3.0
ID = 62A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID= 62A
12.0
VDS= 120V
VDS= 75V
10.0
VDS= 30V
8.0
6.0
4.0
2.0
0.0
0
20 40 60 80 100
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
3Pages IRFB4115GPbF
6.0
5.0
4.0
ID = 250µA
3.0 ID = 1.0mA
ID = 1.0A
2.0
50
IF = 42A
40
VR = 130V
TJ = 25°C
TJ = 125°C
30
20
10
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
50
IF = 62A
40
VR = 130V
TJ = 25°C
TJ = 125°C
30
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
2500
2000
1500
IF = 42A
VR = 130V
TJ = 25°C
TJ = 125°C
20 1000
10 500
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
3000
2400
1800
IF = 62A
VR = 130V
TJ = 25°C
TJ = 125°C
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig. 19 - Typical Stored Charge vs. dif/dt
1200
600
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFB4115GPbF | Power MOSFET ( Transistor ) | International Rectifier |