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IXSA20N60B2D1のメーカーはIXYS Corporationです、この部品の機能は「High Speed IGBT」です。 |
部品番号 | IXSA20N60B2D1 |
| |
部品説明 | High Speed IGBT | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXSA20N60B2D1ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
High Speed IGBT
IXSA 20N60B2D1
IXSP 20N60B2D1
Short Circuit SOA Capability
Preliminary Data Sheet
VCES = 600 V
IC25 = 35 A
VCE(sat) = 2.5 V
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
IF(110)
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VCGlaEm= p1e5dVi,nTdJu=ct1iv2e5°loCa,dRG = 82Ω
tSC
(SCSOA)
PC
TJ
TJM
Tstg
Weight
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 82 Ω, non repetitive
TC = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
Maximum Ratings
600
600
± 20
± 30
35
20
11
60
@
0IC.M8
= 32
VCES
10
V
V
V
V
A
A
A
A
A
μs
190
-55 ... +150
150
-55 ... +150
2
300
260
W
°C
°C
°C
g
°C
°C
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 μA, VGE = 0 V
IC = 750 μA, VCE = VGE
VVGCEE
=
=
0VVCES
VCE = 0 V, VGE = ± 20 V
IC = 16A, VGE = 15 V
Characteristic Values
(TJ
=
25°C,
unless
min.
otherwise specified)
typ. max.
600
3.5
TJ = 125 °C
V
6.5 V
85 μA
0.6 mA
± 100 nA
2.5 V
© 2004 IXYS All rights reserved
TO-220 (IXSP)
GC E
TO-220 (IXSA)
C (TAB)
G
C
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard packages
• Guaranteed Short Circuit SOA
capability
• Low VCE(sat)
- for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
DS99181B(12/05)
1 Page 32
28
24
20
16
12
8
4
0
0.5
Fig. 1. Output Characteristics
@ 25 ºC
VGE = 17V
15V
13V
11V
9V
7V
1 1.5 2 2.5 3 3.5
VC E - Volts
4
32
28
24
20
16
12
8
4
0
0.5
Fig. 3. Output Characteristics
@ 125 ºC
VGE = 17V
15V
13V
11V
9V
7V
1 1.5 2 2.5 3 3.5 4
VCE - Volts
4.5
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
8
7 TJ = 25ºC
6 IC = 32A
16A
5 8A
4
3
2
1
9
10 11 12 13 14 15 16 17 18 19 20
VG E - Volts
IXSA 20N60B2D1
IXSP 20N60B2D1
Fig. 2. Extended Output Characteristics
@ 25 ºC
70
VGE = 17V
60
50 15V
40
13V
30
20 11V
10 9V
0
0 2 4 6 8 10 12 14 16 18 20
VC E - Volts
Fig. 4. De pe ndence of VCE(sat) on
Tem perature
1.8
1.7 VGE = 15V
1.6
1.5
1.4 IC = 32A
1.3
1.2
1.1 IC = 16A
1.0
0.9
0.8
0.7 IC = 8A
0.6
-50 -25
0 25 50 75 100 125
TJ - Degrees Centigrade
150
Fig. 6. Input Adm ittance
60
50
40
30
20
TJ = 125ºC
10 25ºC
-40ºC
0
6 7 8 9 10 11 12 13 14 15 16
VG E - Volts
3Pages IXSA 20N60B2D1
IXSP 20N60B2D1
30
A
25
IF 20
TVJ = 150°C
15 TVJ = 100°C
10
5
0 TVJ = 25°C
0 1 2 3V
VF
Fig. 18. Forward current IF versus VF
250
nC
200
Qr
150
100
TVJ = 100°C
VR = 300 V
IF = 5 A
IF = 10 A
IF = 20 A
50
10
A
IRM 8
6
4
2
IF = 5 A
IF = 10 A
IF = 20 A
TVJ = 100°C
VR = 300 V
0
100 A/μs 1000
-diF/dt
Fig. 19. Reverse recovery charge Qr
0
0 200 400 600 A80/μ0s 1000
-diF/dt
Fig. 20. Peak reverse current IRM
2.0
1.5
Kf
1.0
IRM
0.5
Qr
0.0
0
40 80 120 C 160
TVJ
Fig. 21. Dynamic parameters Qr, IRM
ns
100
trr
80
60
TVJ = 100°C
VR = 300 V
IF = 5 A
IF = 10 A
IF = 20 A
40
60
V
TVJ = 100°C
IF = 10 A
VFR
40
20
VFR
0.3
μs
tfr
0.2
tfr 0.1
0 200 400 600 A8/0μ0s 1000
-diF/dt
Fig. 22. Recovery time trr versus -diF/dt
0 0.0
0 200 400 600 A80/μ0s 1000
diF/dt
Fig. 23. Peak forward voltage VFR and
10
K/W
1
ZthJC
0.1
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 1.449
0.0052
2
0.5578
0.0003
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
Fig. 24. Transient thermal resistance junction-to-case
DSEP 8-06B
s1
t
NOTE: Fig. 18 to Fig. 23 shows typical values
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117
one or moreof the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481
5,381,025 6,162,665 6,306,728 B1 6,534,343
5,486,715 6,259,123 B1 6,404,065B1 6,583,505
6,683,344
6,710,405B2
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IXSA20N60B2D1 | High Speed IGBT | IXYS Corporation |