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G4PSC71UD の電気的特性と機能

G4PSC71UDのメーカーはInternational Rectifierです、この部品の機能は「IRG4PSC71UD」です。


製品の詳細 ( Datasheet PDF )

部品番号 G4PSC71UD
部品説明 IRG4PSC71UD
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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G4PSC71UD Datasheet, G4PSC71UD PDF,ピン配置, 機能
PD - 91682A
IRG4PSC71UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
• IGBT co-packaged with HEXFRED ultrafast, ultrasoft
recovery anti-parallel diodes for use in bridge
configurations
• Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
• Creepage distance increased to 5.35mm
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.67V
@VGE = 15V, IC = 60A
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTs
• Cost and space saving in designs that require
multiple, paralleled IGBTs
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance\ Mechanical
RθJC
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
SUPER - 247
Max.
600
85…
60
200
200
60
350
± 20
350
140
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
20.0(2.0)
–––
Typ.
–––
–––
0.24
–––
–––
6 (0.21)
Max.
0.36
0.69
–––
38
–––
–––
Units
°C/W
N (kgf)
g (oz)
1
5/12/99

1 Page





G4PSC71UD pdf, ピン配列
80
60
Square wave:
40 60% of rated
voltage
I
20
Ideal diodes
0
0.1
IRG4PSC71UD
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P ow er D is s ipation = 58 W
1 10
f, Frequency (KHz)
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
100
10
TJ = 25 °C
TJ = 150 °C
1000
TJ = 150 °C
100
TJ = 25 °C
10
VGE = 15V
80µs PULSE WIDTH
1
1.0 1.5 2.0 2.5 3.0 3.5
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
VCC = 50V
5µs PULSE WIDTH
1
5 6 7 8 9 10
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


G4PSC71UD 電子部品, 半導体
IRG4PSC71UD
25 RG = 5.0Ohm
T J = 150° C
VCC = 480V
20 VGE = 15V
15
10
5
0
20 40 60 80 100 120
I C , Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
1000
VGE = 20V
T J = 125 o C
100
10
SAFE OPERATING AREA
1
1 10 100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
100
1 0 TJ = 1 5 0 ° C
TJ = 1 2 5 ° C
TJ = 2 5 ° C
1
0.0 1.0 2.0 3.0
Forwa rd V olta ge D rop - V FM (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com

6 Page



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部品番号部品説明メーカ
G4PSC71UD

IRG4PSC71UD

International Rectifier
International Rectifier


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