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4N60-Q の電気的特性と機能

4N60-QのメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 4N60-Q
部品説明 N-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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4N60-Q Datasheet, 4N60-Q PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
4N60-Q
4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N60-Q is a high voltage power MOSFET
and is designed to have better characteristics, such as
fast switching time, low gate charge, low on-state
resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC
converters and bridge circuits.
FEATURES
* RDS(ON) < 2.5@ VGS = 10 V, ID = 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high RuggednessA
SYMBOL
Power MOSFET
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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4N60-Q pdf, ピン配列
4N60-Q
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 600 V
VGSS ±30 V
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
ID
IDM
EAS
EAR
dv/dt
4.4 A
4.0 A
16 A
60 mJ
10.6 mJ
4.5 V/ns
TO-220/TO-262/TO-263
106
TO-220F/TO-220F1
TO-220F3
36
Power Dissipation
TO-220F2
TO-251/TO-252/TO-252D
PD
38 W
TO-251S/TO-251S2
50
TO-251S4
DFN-8(5×6)
30
Junction Temperature
TJ
+150
°С
Operating Temperature
Storage Temperature
TOPR
TSTG
-55 ~ +150
-55 ~ +150
°С
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 2A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD4.4A, di/dt 200A/μs, VDDBVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/TO-252/TO-252D
TO-251S/TO-251S2
TO-251S4
DFN-8(5×6)
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/TO-252/TO-252D
TO-251S/TO-251S2
TO-251S4
DFN-8(5×6)
SYMBOL
θJA
θJC
RATINGS
62.5
110
75
1.18
3.47
3.28
2.5
4.17
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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3Pages


4N60-Q 電子部品, 半導体
4N60-Q
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS 90%
Power MOSFET
Switching Test Circuit
10%
VGS
tD(ON)
tR
tD(OFF)
tF
Switching Waveforms
VGS
10V
QGS
QG
QGD
Gate Charge Test Circuit
Charge
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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ページ 合計 : 7 ページ
 
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[ 4N60-Q データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
4N60-C

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
4N60-E

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
4N60-N

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
4N60-Q

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies


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