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2DD2679のメーカーはDiodesです、この部品の機能は「NPN SURFACE MOUNT TRANSISTOR」です。 |
部品番号 | 2DD2679 |
| |
部品説明 | NPN SURFACE MOUNT TRANSISTOR | ||
メーカ | Diodes | ||
ロゴ | |||
このページの下部にプレビューと2DD2679ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
2DD2679
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Complementary PNP Type (2DB1714) Available
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
COLLECTOR
2,4
3E
Top View
1
BASE
3
EMITTER
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
C4 2 C
1B
TOP VIEW
Pin Out Configuration
Value
30
30
6
4
2
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.9
139
2
62.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
hFE
Min
30
30
6
⎯
⎯
⎯
270
Output Capacitance
Cobo
⎯
Typ
⎯
⎯
⎯
⎯
⎯
80
⎯
11
Max
⎯
⎯
⎯
0.1
0.1
370
680
⎯
Unit
V
V
V
μA
μA
mV
⎯
pF
Current Gain-Bandwidth Product
fT
⎯ 240 ⎯
MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 Copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Conditions
IC = 10μA, IE = 0
IC = 1mA, IB = 0
IE = 10μA, IC = 0
VCB = 30V, IE = 0
VEB = 6V, IC = 0
IC = 1.5A, IB = 75mA
VCE = 2V, IC = 200mA
VCB = 10V, IE = 0,
f = 1MHz
VCE = 2V, IC = 100mA,
f = 100MHz
2DD2679
Document number: DS31629 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
1 Page 1.2
IC/IB = 20
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
TA = 150°C
0.2
0
1 10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
100
1,000
2DD2679
f = 1MHz
100
Cibo
10
Cobo
1
0.1 1
10 100
VR, REVERSE VOLTAGE (V)
Fig. 8 Typical Capacitance Characteristics
10
VCE = 2V
f = 100MHz
1
0 10 20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical Gain-Bandwidth Product
vs. Collector Current
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = 0.9
D = Single Pulse
0.001
0.00001 0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 10 Transient Thermal Response
RθJA(t) = r(t) * RθJA
RθJA = 133°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
10 100
1,000
2DD2679
Document number: DS31629 Rev. 2 - 2
3 of 4
www.diodes.com
December 2008
© Diodes Incorporated
3Pages | |||
ページ | 合計 : 4 ページ | ||
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部品番号 | 部品説明 | メーカ |
2DD2678 | NPN SURFACE MOUNT TRANSISTOR | Diodes |
2DD2679 | NPN SURFACE MOUNT TRANSISTOR | Diodes |