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2DD2679 の電気的特性と機能

2DD2679のメーカーはDiodesです、この部品の機能は「NPN SURFACE MOUNT TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 2DD2679
部品説明 NPN SURFACE MOUNT TRANSISTOR
メーカ Diodes
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2DD2679 Datasheet, 2DD2679 PDF,ピン配置, 機能
2DD2679
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Complementary PNP Type (2DB1714) Available
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
COLLECTOR
2,4
3E
Top View
1
BASE
3
EMITTER
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
C4 2 C
1B
TOP VIEW
Pin Out Configuration
Value
30
30
6
4
2
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.9
139
2
62.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
hFE
Min
30
30
6
270
Output Capacitance
Cobo
Typ
80
11
Max
0.1
0.1
370
680
Unit
V
V
V
μA
μA
mV
pF
Current Gain-Bandwidth Product
fT
240
MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 Copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
Conditions
IC = 10μA, IE = 0
IC = 1mA, IB = 0
IE = 10μA, IC = 0
VCB = 30V, IE = 0
VEB = 6V, IC = 0
IC = 1.5A, IB = 75mA
VCE = 2V, IC = 200mA
VCB = 10V, IE = 0,
f = 1MHz
VCE = 2V, IC = 100mA,
f = 100MHz
2DD2679
Document number: DS31629 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated

1 Page





2DD2679 pdf, ピン配列
1.2
IC/IB = 20
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
TA = 150°C
0.2
0
1 10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
100
1,000
2DD2679
f = 1MHz
100
Cibo
10
Cobo
1
0.1 1
10 100
VR, REVERSE VOLTAGE (V)
Fig. 8 Typical Capacitance Characteristics
10
VCE = 2V
f = 100MHz
1
0 10 20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical Gain-Bandwidth Product
vs. Collector Current
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = 0.9
D = Single Pulse
0.001
0.00001 0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 10 Transient Thermal Response
RθJA(t) = r(t) * RθJA
RθJA = 133°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
10 100
1,000
2DD2679
Document number: DS31629 Rev. 2 - 2
3 of 4
www.diodes.com
December 2008
© Diodes Incorporated


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部品番号部品説明メーカ
2DD2678

NPN SURFACE MOUNT TRANSISTOR

Diodes
Diodes
2DD2679

NPN SURFACE MOUNT TRANSISTOR

Diodes
Diodes


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