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IRFB5615PbF の電気的特性と機能

IRFB5615PbFのメーカーはInternational Rectifierです、この部品の機能は「Digital Audio MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB5615PbF
部品説明 Digital Audio MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB5615PbF Datasheet, IRFB5615PbF PDF,ピン配置, 機能
DIGITAL AUDIO MOSFET
PD - 96173
IRFB5615PbF
Features
Key Parameters Optimized for Class-D Audio
Amplifier Applications
Low RDSON for Improved Efficiency
Low QG and QSW for Better THD and Improved
Efficiency
Low QRR for Better THD and Lower EMI
175°C Operating Junction Temperature for
Ruggedness
Can Deliver up to 300W per Channel into 4Load in
Half-Bridge Configuration Amplifier
Key Parameters
VDS 150
RDS(ON) typ. @ 10V
32
Qg typ.
Qsw typ.
RG(int) typ.
26
11
2.7
TJ max
175
DD
V
m:
nC
nC
°C
G
S
S
D
G
TO-220AB
GD S
Gate
Drain
Source
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
fJunction-to-Case
Case-to-Sink, Flat, Greased Surface
fJunction-to-Ambient
Notes  through … are on page 2
www.irf.com
Max.
150
±20
35
25
140
144
72
0.96
-55 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
0.50
–––
Max.
1.045
–––
62
Units
V
A
W
W/°C
°C
Units
°C/W
1
09/05/08

1 Page





IRFB5615PbF pdf, ピン配列
IRFB5615PbF
1000
100
10
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
1
1000
100
10
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
5.0V
0.1
0.01
0.1
5.0V
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
TJ = 25°C
10
1
0.1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0
ID = 21A
2.5 VGS = 10V
2.0
1.5
1
VDS = 50V
60µs PULSE WIDTH
0.1
2 4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
100
Ciss
Coss
Crss
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
12.0
ID= 21A
10.0
8.0
VDS= 120V
VDS= 75V
VDS= 30V
6.0
4.0
2.0
10
1
10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0.0
0
5 10 15 20 25 30
QG, Total Gate Charge (nC)
35
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3


3Pages


IRFB5615PbF 電子部品, 半導体
IRFB5615PbF
+
‚
-

RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD +
-
Re-Applied
Voltage
Body Diode
InIndduuccttoorrCCuurrenntt
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 17a. Unclamped Inductive Test Circuit
VDS
RD
VGS
RG
D.U.T.
+
-
V
DD
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 19a. Gate Charge Test Circuit
6
IAS
Fig 17b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 18b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 19b. Gate Charge Waveform
www.irf.com

6 Page



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部品番号部品説明メーカ
IRFB5615PbF

Digital Audio MOSFET

International Rectifier
International Rectifier


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