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STU13N60M2のメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。 |
部品番号 | STU13N60M2 |
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部品説明 | N-channel Power MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTU13N60M2ダウンロード(pdfファイル)リンクがあります。 Total 18 pages
STP13N60M2, STU13N60M2,
STW13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg
Power MOSFETs in TO-220, IPAK and TO-247 packages
Datasheet − production data
TAB
3
2
1
TO-220
TAB
IPAK
3
2
1
3
2
1
TO-247
Figure 1. Internal schematic diagram
, TAB
Features
Order codes VDS @ TJmax RDS(on) max ID
STP13N60M2
STU13N60M2
650 V
0.38 Ω
11 A
STW13N60M2
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
AM15572v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STP13N60M2
STU13N60M2
STW13N60M2
Table 1. Device summary
Marking
Package
13N60M2
TO-220
IPAK
TO-247
February 2014
This is information on a product in full production.
DocID023937 Rev 5
Packaging
Tube
1/18
www.st.com
18
1 Page STP13N60M2, STU13N60M2, STW13N60M2
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VGS
ID
ID
(1)
IDM
PTOT
(2)
dv/dt
(3)
dv/dt
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤ 11 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V.
3. VDS ≤ 480 V
± 25
11
7
44
110
15
50
- 55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
TO-220
62.5
Value
IPAK
1.14
100
Unit
TO-247
°C/W
50 °C/W
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Avalanche current, repetitive or not
IAR repetitive (pulse width limited by Tjmax )
Single pulse avalanche energy (starting
EAS Tj=25°C, ID= IAR; VDD=50)
2.8
125
Unit
A
mJ
DocID023937 Rev 5
3/18
3Pages Electrical characteristics
STP13N60M2, STU13N60M2, STW13N60M2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 and
TO-247
ID AM15710v1
(A)
Figure 3. Thermal impedance for TO-220 and
TO-247
10 10µs
100 µS
1
0.1
0.1
1
1ms
Tj=150°C
Tc=25°C
Single pulse
10ms
10 100 VDS(V)
Figure 4. Safe operating area for IPAK
ID AM15711v1
(A)
10µs
10
100 µS
1
0.1
0.1
1
1ms
Tj=150°C
Tc=25°C
Single pulse
10ms
10 100 VDS(V)
Figure 6. Output characteristics
ID AM15712v1
(A) VGS=7, 8, 9, 10V
20
6V
16
12
8 5V
4
4V
0
0 4 8 12 16 VDS(V)
Figure 5. Thermal impedance for IPAK
Figure 7. Transfer characteristics
ID (A)
AM15713v1
20 VDS=18V
16
12
8
4
0
0 2 4 6 8 VGS(V)
6/18 DocID023937 Rev 5
6 Page | |||
ページ | 合計 : 18 ページ | ||
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部品番号 | 部品説明 | メーカ |
STU13N60M2 | N-channel Power MOSFET | STMicroelectronics |