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GVA-123 の電気的特性と機能

GVA-123のメーカーはMini-Circuitsです、この部品の機能は「Monolithic Amplifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 GVA-123
部品説明 Monolithic Amplifier
メーカ Mini-Circuits
ロゴ Mini-Circuits ロゴ 




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GVA-123 Datasheet, GVA-123 PDF,ピン配置, 機能
FMlatoGanin,oUlltirat-hWiidcebaAnd mplifier
500.01 to 12 GHz
The Big Deal
• Ultra broadband performance
• Excellent Gain Flatness
• Broadband without external matching components
GVA-123+
SOT-89 PACKAGE
Product Overview
GVA-123+ (RoHS compliant) is an advanced ultra-wideband amplifier fabricated using GaAs HBT technol-
ogy and offers excellent gain flatness over a broad frequency range. In addition, the GVA-123+ has good
input and output return loss over this frequency range without the need for external matching components.
Lead finish is tin-silver over nickel. It has repeatable performance from lot to lot and is enclosed in a SOT-89
package for very good thermal performance.
Key Features
Feature
Ultra Broad Band: 0.01 to 12 GHz
Ultra Flat Gain
±0.7 dB typ: 0.05 - 8 GHz
No External Matching Components
Required
Excellent ESD
HBM: class 1C (1000 to <2000V)
MM: class M2 (100 to <200V)
Advantages
Broadband covering primary wireless communications bands:
Cellular, PCS, LTE, WiMAX in a single amplifier.
Ultra Flat Gain, eliminates need for compensation networks to achieve published results
GVA-123+ provides good Input and Output Return Loss of 12-28 dB over 0.05 - 6 GHz with-
out the need for any external matching components
Simplifies ESD handling.
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected]
Page 1 of 5

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GVA-123 pdf, ピン配列
Monolithic InGap HBT MMIC Amplifier
Electrical Specifications at 25°C and Vcc=5V, R= 16.5Ω unless noted
Parameter
Frequency Range
Gain
Gain Flatness
Input Return Loss
Output Return Loss
Condition (GHz)
0.05
0.85
2.0
6.0
8.0
10.0
12.0
0.05-8
0.05
0.85
2.0
6.0
8.0
10.0
12.0
0.05
Min.
0.01
­—
15.2
16.0
Typ.
16.2
17.2
16.9
16.4
16.3
12.5
7.1
±0.7
12.7
24.9
23.8
22.2
9.2
7.5
6.3
14.4
0.85
2.0
6.0
8.0
10.0
12.0
Reverse Isolation
6.0
Output Power at 1dB Compression
0.05
0.85
2.0
6.0
8.0
10.0
12.0
Output IP3
0.2
0.85
2.0
6.0
8.0
10.0
12.0
Noise Figure
0.2
0.85
2.0
6.0
8.0
12.0
Supply Operating Voltage (Vcc)
4.8
Device Operating Current
Device Current Variation vs. Temperature2
Device Current Variation vs. Voltage
Thermal Resistance, junction-to-ground lead
(1) Measured on Mini-Circuits Characterization test board TB-665+. See Characterization Test Circuit (Fig. 1)
(2) (Current at 85°C —­ Current at -45°C)/130
31.0
23.5
15.5
9.0
7.4
6.0
20.7
15.9
16.3
16.2
13.4
10.3
7.4
5.1
30.2
31.1
29.9
24.5
21.8
19.1
14.9
3.8
3.9
4.0
4.4
4.9
6.9
5.0
52
56
0.020
156
GVA-123+
Max.
12.0
18.6
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dB
5.2 V
57 mA
µA/°C
mA/mW
°C/W
Absolute Maximum Ratings(3)
Parameter
Ratings
Operating Temperature (ground lead)
Storage Temperature
Operating Current at 5V (Vcc) & 16.5resistor
Power Dissipation
Input Power (CW)
DC Voltage on Pin 3
-40°C to 85°C
-65°C to 150°C
100 mA
0.34 W
28 dBm (5 min max.)
11 dBm (continuous)
6V
(3) Permanent damage may occur if any of these limits are exceeded.
Electrical maximum ratings are not intended for continuous normal operation.
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected]
Page 3 of 5


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共有リンク

Link :


部品番号部品説明メーカ
GVA-123

Monolithic Amplifier

Mini-Circuits
Mini-Circuits
GVA-123+

Monolithic Amplifier

Mini-Circuits
Mini-Circuits


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