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B642のメーカーはPanasonic Semiconductorです、この部品の機能は「PNP Transistor - 2SB642」です。 |
部品番号 | B642 |
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部品説明 | PNP Transistor - 2SB642 | ||
メーカ | Panasonic Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとB642ダウンロード(pdfファイル)リンクがあります。 Total 3 pages
Transistor
2SB642
Silicon PNP epitaxial planer type
For low-power general amplification
s Features
q High foward current transfer ratio hFE.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–60
–50
–7
–200
–100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
fT
Cob
VCB = –20V, IE = 0
–1 nA
VCE = –20V, IB = 0
–1 µA
IC = –10µA, IE = 0
–60
V
IC = –2mA, IB = 0
–50
V
IE = –10µA, IC = 0
–7
V
VCE = –10V, IC = –2mA
160 460
IC = –100mA, IB = –10mA
–1 V
VCB = –10V, IE = 2mA, f = 200MHz 80 MHz
VCB = –10V, IE = 0, f = 1MHz
3.5 pF
*hFE Rank classification
Rank
Q
hFE 160 ~ 260
R
210 ~ 340
S
290 ~ 460
1
1 Page Transistor
Cre — VCE
6
IC=–1mA
f=10.7MHz
Ta=25˚C
5
4
3
2
1
0
0 –5 –10 –15 –20 –25 –30
Collector to emitter voltage VCE (V)
h Parameter — IE
300
hfe
100
30 hoe (µS)
10
hie (kΩ)
3
VCE=–5V
f=270Hz
1
hre (!10–4)
Ta=25˚C
0.1 0.3 1 3 10
Emitter current IE (mA)
NF — IE
6
VCB=–5V
f=1kHz
5 Rg=2kΩ
Ta=25˚C
4
3
2
1
0
0.01 0.03 0.1 0.3 1 3
Emitter current IE (mA)
10
h Parameter — VCE
300 IE=2mA
f=270Hz
hfe Ta=25˚C
100
30
hoe (µS)
10
3 hre (!10–4)
hie (kΩ)
1
–1 –3 –10 –30 –100
Collector to emitter voltage VCE (V)
2SB642
NF — IE
20 VCB=–5V
18
Rg=50kΩ
Ta=25˚C
16
14
12 f=100Hz
10 1kHz
8
6 10kHz
4
2
0
0.1 0.3 1 3 10
Emitter current IE (mA)
ICBO — Ta
100
VCB=–10V
30
10
3
1
0 25 50 75 100 125 150
Ambient temperature Ta (˚C)
3
3Pages | |||
ページ | 合計 : 3 ページ | ||
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PDF ダウンロード | [ B642 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
B642 | PNP Transistor - 2SB642 | Panasonic Semiconductor |
B643 | PNP Transistor - 2SB643 | Panasonic Semiconductor |
B644 | PNP Transistor - 2SB644 | Panasonic Semiconductor |
B645 | PNP Transistor - 2SB645 | SavantIC |