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IRF7805TRPbF-1 の電気的特性と機能

IRF7805TRPbF-1のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Chip-Set for DC-DC Converters」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7805TRPbF-1
部品説明 HEXFET Chip-Set for DC-DC Converters
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7805TRPbF-1 Datasheet, IRF7805TRPbF-1 PDF,ピン配置, 機能
VDS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
30 V
11 mΩ
22 nC
13 A
IRF7805TRPbF-1
HEXFET® Chip-Set for DC-DC Converters
S1
S2
S3
G4
A
8D
7D
6D
5D
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7805PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7805TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
cPulsed Drain Current
ePower Dissipation
ePower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
egRθJA Junction-to-Ambient
Max.
30
± 12
13
10
100
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
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October 16, 2014

1 Page





IRF7805TRPbF-1 pdf, ピン配列
IRF7805TRPbF-1
Typical Characteristics
Fig 1. Normalized On-Resistance vs. Temperature
Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage
10
TJ = 150 °C
1
TJ = 25 °C
Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage
100
0.1
0.4
VGS = 0 V
0.5 0.6 0.7 0.8
VSD ,Source-to-Drain Voltage (V)
0.9
Fig 4. Typical Source-Drain Diode Forward Voltage
D = 0.50
10 0.20
0.10
0.05
0.02
1 0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.1
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1000
3 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
October 16, 2014


3Pages


IRF7805TRPbF-1 電子部品, 半導体
IRF7805TRPbF-1
Qualification information
Qualification level
Moisture Sensitivity Level
RoHS compliant
I ndus tr ial
(per JEDE C JE S D47F †† guidelines)
SO-8
MS L1
(per JEDE C J-S T D-020D†† )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
10/16/2014
Comments
Corrected part number from" IRF7805PbF-1" to "IRF7805TRPbF-1" -all pages
Removed the "IRF7805PbF-1" bulk part number from ordering information on page1
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
6 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
October 16, 2014

6 Page



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部品番号部品説明メーカ
IRF7805TRPbF-1

Power MOSFET ( Transistor )

Infineon
Infineon
IRF7805TRPbF-1

HEXFET Chip-Set for DC-DC Converters

International Rectifier
International Rectifier


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