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Datasheet IPC-CC-830B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IPC-CC-830B | Qualification and Performance of Electrical Insulating Compound IPC-CC-830B
Amendment 1 Qualification and Performance of Electrical Insulating Compound for Printed Wiring Assemblies
September 2008
A standard developed by IPC
Association Connecting Electronics Industries ®
The Principles of Standardization
In May 1995 the IPC’s Technical Activities Executive |  IPC | data |
IPC Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IPC-CC-830B | Qualification and Performance of Electrical Insulating Compound IPC-CC-830B
Amendment 1 Qualification and Performance of Electrical Insulating Compound for Printed Wiring Assemblies
September 2008
A standard developed by IPC
Association Connecting Electronics Industries ®
The Principles of Standardization
In May 1995 the IPC’s Technical Activities Executive IPC data | | |
| 2 | IPC014N03L3 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
BareDie
OptiMOS™3PowerMOSTransistorChip IPC014N03L3
DataSheet
Rev.2.5 Final
Industrial&Multimarket
OptiMOS™3PowerMOSTransistorChip
IPC014N03L3
1Description
•N-channelenhancementmode •Fordynamiccharacterizatio  Infineon mosfet | | |
| 3 | IPC020N10L3 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
BareDie
OptiMOS™3PowerMOSTransistorChip IPC020N10L3
DataSheet
Rev.2.5 Final
Industrial&Multimarket
OptiMOS™3PowerMOSTransistorChip
IPC020N10L3
1Description
•N-channelenhancementmode •Fordynamiccharacterizatio Infineon mosfet | | |
| 4 | IPC022N03L3 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
BareDie
OptiMOS™3PowerMOSTransistorChip IPC022N03L3
DataSheet
Rev.2.5 Final
Industrial&Multimarket
OptiMOS™3PowerMOSTransistorChip
IPC022N03L3
1Description
•N-channelenhancementmode •Fordynamiccharacterizatio Infineon mosfet | | |
| 5 | IPC028N03L3 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
BareDie
OptiMOS™3PowerMOSTransistorChip IPC028N03L3
DataSheet
Rev.2.5 Final
Industrial&Multimarket
OptiMOS™3PowerMOSTransistorChip
IPC028N03L3
1Description
•N-channelenhancementmode •Fordynamiccharacterizatio Infineon mosfet | | |
| 6 | IPC042N03L3 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
BareDie
OptiMOS™3PowerMOSTransistorChip IPC042N03L3
DataSheet
Rev.2.5 Final
Industrial&Multimarket
OptiMOS™3PowerMOSTransistorChip
IPC042N03L3
1Description
•N-channelenhancementmode •Fordynamiccharacterizatio Infineon mosfet | | |
| 7 | IPC045N10L3 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
BareDie
OptiMOS™3PowerMOSTransistorChip IPC045N10L3
DataSheet
Rev.2.5 Final
Industrial&Multimarket
OptiMOS™3PowerMOSTransistorChip
IPC045N10L3
1Description
•N-channelenhancementmode •Fordynamiccharacterizatio Infineon mosfet | |
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