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PDF IXTA2N100 Data sheet ( Hoja de datos )
| Número de pieza | IXTA2N100 | |
| Descripción | High Voltage MOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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High Voltage
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA2N100
IXTP2N100
VDSS =
ID25 =
≤RDS(on)
1000V
2A
7Ω
TO-263 (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-263
TO-220
Maximum Ratings
1000
1000
V
V
±20 V
±30 V
2A
8A
2A
150 mJ
5 V/ns
100 W
- 55 ... +150
150
- 55 ... +150
300
260
1.13 / 10
2.5
3.0
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
2.0 4.5 V
±100 nA
25 μA
100 μΑ
7Ω
GS
TO-220 (IXTP)
(TAB)
G DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International Standard Packages
z Avalanche Rated
z Low Package Inductance (< 5nH)
z Fast Switching Times
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Switched-Mode and Resonant-Mode
Power Supplies
z FlyBack Inverters
z DC Choppers
© 2009 IXYS CORPORATION, All Rights Reserved
DS97540B(04/09)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTA2N100.PDF ] | |
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