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STB70N10F4 の電気的特性と機能

STB70N10F4のメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STB70N10F4
部品説明 N-CHANNEL MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STB70N10F4 Datasheet, STB70N10F4 PDF,ピン配置, 機能
STB70N10F4, STD70N10F4
STP70N10F4, STW70N10F4
N-channel 100 V, 0.015 , 60 A, STripFET™ DeepGATE™
Power MOSFET in TO-220, DPAK, TO-247, D2PAK
Features
Type
STB70N10F4
STD70N10F4
STP70N10F4
STW70N10F4
VDSS
100 V
100 V
100 V
100 V
RDS(on) max
< 0.0195
< 0.0195
< 0.0195
< 0.0195
ID
65 A
60 A
65 A
65 A
Exceptional dv/dt capability
Extremely low on-resistance RDS(on)
100% avalanche tested
Application
Switching applications
Description
This STripFET™ DeepGATE™ Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state resistance, with a new gate structure,
providing superior switching performance.
3
2
1
TO-247
3
2
1
TO-220
3
1
DPAK
3
1
D²PAK
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order codes
STB70N10F4
STD70N10F4
STP70N10F4
STW70N10F4
Marking
70N10F4
70N10F4
70N10F4
70N10F4
3
!-V
Package
D²PAK
DPAK
TO-220
TO-247
Packaging
Tape and reel
Tape and reel
Tube
Tube
October 2009
Doc ID 15207 Rev 3
1/18
www.st.com
18

1 Page





STB70N10F4 pdf, ピン配列
STB/D/P/W70N10F4
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID
IDM (1)
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
EAS (2) Single pulse avalanche energy
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area
2. Starting Tj = 25 °C, ID= 32.5 A, VDD= 45 V
Value
TO-220, TO-247,
D²PAK
100
± 20
65
46
260
150
1
120
DPAK
60
43
240
125
0.83
– 55 to 175
Unit
V
V
A
A
A
W
W/°C
mJ
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-a Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering
purpose
1. When mounted on FR-4 board of 1 inch², 2 oz Cu
Value
TO-220, TO-247,
D²PAK
1
62.5
DPAK
1.2
50 (1)
300
Unit
°C/W
°C/W
°C
Doc ID 15207 Rev 3
3/18


3Pages


STB70N10F4 電子部品, 半導体
Electrical characteristics
STB/D/P/W70N10F4
2.1 Electrical characteristics (curves)
Figure 2.
ID
(A)
Safe operating area for TO-220,
TO-247, D²PAK
Figure 3.
AM03243v1
Thermal impedance for TO-220,
TO-247, D²PAK
100
10
1
0.1
0.1
Tj=175°C
Tc=25°C
Single
pulse
1 10
100µs
1ms
10ms
100 VDS(V)
Figure 4.
ID
(A)
Safe operating area for DPAK
Figure 5.
AM03245v1
Thermal impedance for DPAK
100
10
1
0.1
0.1
Tj=175°C
Tc=25°C
Single
pulse
1 10
100µs
1ms
10ms
100 VDS(V)
Figure 6. Output characteristics
ID
(A)
Figure 7.
AM03168v1
ID
(A)
Transfer characteristics
AM03169v1
160
140
120
100
80
60
40
20
0
0
VGS=10V
6V
5V
2 4 6 8 VDS(V)
160
120
80
40
0
0
VDS=6V
2 46
8 VGS(V)
6/18 Doc ID 15207 Rev 3

6 Page



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部品番号部品説明メーカ
STB70N10F4

N-CHANNEL MOSFET

STMicroelectronics
STMicroelectronics


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