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UPD4564441 の電気的特性と機能

UPD4564441のメーカーはNECです、この部品の機能は「64M-bit Synchronous DRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPD4564441
部品説明 64M-bit Synchronous DRAM
メーカ NEC
ロゴ NEC ロゴ 




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UPD4564441 Datasheet, UPD4564441 PDF,ピン配置, 機能
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4564441, 4564841, 4564163
64M-bit Synchronous DRAM
4-bank, LVTTL
Description
The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access
memories, organized as 4,194,304 × 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 (word × bit × bank), respectively.
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
All inputs and outputs are synchronized with the positive edge of the clock.
The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).
These products are packaged in 54-pin TSOP (II).
Features
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by A12 and A13 (Bank Select)
Byte control (×16) by LDQM and UDQM
Programmable Wrap sequence (Sequential / Interleave)
Programmable burst length (1, 2, 4, 8 and full page)
Programmable /CAS latency (2 and 3)
Automatic precharge and controlled precharge
CBR (auto) refresh and self refresh
• ×4, ×8, ×16 organization
Single 3.3 V ± 0.3 V power supply
LVTTL compatible inputs and outputs
4,096 refresh cycles / 64 ms
Burst termination by Burst stop command and Precharge command
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M12621EJCV0DS00 (12th edition)
Date Published January 2000 NS CP (K)
Printed in Japan
The mark shows major revised points.
©
1997

1 Page





UPD4564441 pdf, ピン配列
µPD4564441, 4564841, 4564163
5 Part Number
[ x4, x8 ]
µPD4564841G5 - A80
NEC Memory
Synchronous DRAM
Memory density
64 : 64M bits
Organization
4 : x4
8 : x8
Minimum cycle time
80 : 8 ns (125 MHz)
10 : 10 ns (100 MHz)
10B : 10 ns (100 MHz)
Number of banks
4 : 4 banks
Interface
1 : LVTTL
[ x16 ]
163
Low voltage
A : 3.3 ± 0.3 V
Package
G5 : TSOP (II)
Organization
16 : x16
Number of banks
and Interface
3 : 4 banks, LVTTL
Data Sheet M12621EJCV0DS00
3


3Pages


UPD4564441 電子部品, 半導体
µPD4564441, 4564841, 4564163
[µPD4564163]
54-pin Plastic TSOP (II) (10.16mm (400))
1M words × 16 bits × 4 banks
VCC
DQ0
VCCQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VCCQ
DQ5
DQ6
VSSQ
DQ7
VCC
LDQM
/WE
/CAS
/RAS
/CS
A13
A12
A10
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54 Vss
53 DQ15
52 VssQ
51 DQ14
50 DQ13
49 VccQ
48 DQ12
47 DQ11
46 VssQ
45 DQ10
44 DQ9
43 VccQ
42 DQ8
41 Vss
40 NC
39 UDQM
38 CLK
37 CKE
36 NC
35 A11
34 A9
33 A8
32 A7
31 A6
30 A5
29 A4
28 Vss
A0 to A13 Note : Address inputs
DQ0 to DQ15 : Data inputs / outputs
CLK : Clock input
CKE
: Clock enable
/CS : Chip select
/RAS
: Row address strobe
/CAS
: Column address strobe
/WE : Write enable
LDQM
: Lower DQ mask enable
UDQM
: Upper DQ mask enable
VCC : Supply voltage
VSS : Ground
VCCQ
: Supply voltage for DQ
VSSQ
: Ground for DQ
NC : No connection
Note A0 to A11 : Row address inputs
A0 to A7 : Column address inputs
A12, A13 : Bank select
6 Data Sheet M12621EJCV0DS00

6 Page



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共有リンク

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部品番号部品説明メーカ
UPD4564441

(UPD4564841/441/163) 64M-bit SDRAM / 4-Bank

Elpida Memory
Elpida Memory
UPD4564441

64M-bit Synchronous DRAM

NEC
NEC


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