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PDF IXFK28N60 Data sheet ( Hoja de datos )
| Número de pieza | IXFK28N60 | |
| Descripción | Power MOSFETs | |
| Fabricantes | IXYS | |
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HiPerFETTM
Power MOSFETs
IXFH 26N60/IXFT 26N60
IXFK 28N60
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Preliminary data
V
DSS
I
D25
600 V 26 A
600 V 28 A
trr £ 250 ns
R
DS(on)
0.25 W
0.25 W
Symbol
VDSS
VDGR
V
GS
VGSM
I
D25
I
DM
I
AR
EAR
EAS
dv/dt
P
D
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
T
C
= 25°C, Chip capability
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Maximum Ratings
IXFH/ IXFT IXFK
600 600
600 600
±20 ±20
±30 ±30
26 28
104 112
26 28
50 50
1.5 1.5
V
V
V
V
A
A
A
mJ
J
5 5 V/ns
360 416
-55 ... +150
150
-55 ... +150
300 300
W
°C
°C
°C
°C
1.13/10
6
0.9/6 Nm/lb.in.
10 g
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
TO-264 AA (IXFK)
(TAB)
(TAB)
G
D
S
D (TAB)
G = Gate
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Symbol
VDSS
VGS(th)
I
GSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 4 mA
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
600
2
V
4.5 V
±200 nA
25 mA
1 mA
0.25 W
Features
• International standard packages
• EpoxymeetUL94V-0, flammability
classification
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98511B (7/00)
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