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K3831 の電気的特性と機能

K3831のメーカーはSanyo Semicon Deviceです、この部品の機能は「MOSFET ( Transistor ) - 2SK3831」です。


製品の詳細 ( Datasheet PDF )

部品番号 K3831
部品説明 MOSFET ( Transistor ) - 2SK3831
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




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K3831 Datasheet, K3831 PDF,ピン配置, 機能
Ordering number : ENN8028
2SK3831
N-Channel Silicon MOSFET
2SK3831 General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC Converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
*1. VDD=20V, L=50µH, IAV=85A
*2. L50µH, 1 Pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
60
±20
85
340
2.5
100
150
--55 to +150
271
85
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : K3831
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS= ±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=43A
ID=43A, VGS=10V
ID=43A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
min
60
1.2
30
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
50 S
10 13 m
13 18 m
5250
pF
780 pF
525 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21405QA TS IM TB-00000311 No.8028-1/4

1 Page





K3831 pdf, ピン配列
2SK3831
RDS(on) -- VGS
30
ID=43A
25
20
15 Tc=75°C
25°C
10
--25°C
5
RDS(on) -- Tc
25
20
15
10
I D=ID43=A43, VA,GVS=G4SV=10V
5
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Gate-to-Source Voltage, VGS -- V
yfs-- ID
100
7 VDS=10V
5
9.0 10
IT07699
3
2 25°C
10
7
5
Tc=
--25°C
75°C
3
2
1.0
7
5
0.1
10000
7
5
3
2
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain Current, ID -- A
IT07701
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
1000
7
5
3
2
100
0
1000
7
5
3
2
Coss
Crss
5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT07703
SW Time -- ID
td(off)
tf
100
7
5
3
2
10
0.1
tr
td(on)
23
5 7 1.0 2 3 5 7 10
Drain Current, ID -- A
VDD=30V
VGS=10V
2 3 5 7 100
IT07705
0
--50 --25
100
7
5
VGS=0V
3
2
0 25 50 75 100
Case Temperature, Tc -- °C
IF -- VSD
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.2 0.4 0.6 0.8 1.0
Diode Forward Voltage, VSD -- V
VGS -- Qg
10
VDS=30V
9.0 ID=85A
8.0
125 150
IT07700
1.2 1.4
IT07702
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0 10 20 30 40 50 60 70 80 90 100 110 120
Total Gate Charge, Qg -- nC
IT07704
ASO
7
5 IDP=340A
<10µs
3
2
100 ID=85A
7
5
3
2
10
7
5
10µs
DC o1p0e01rma0tmiso1snms100µs
3 Operation in
2 this area is
1.0 limited by RDS(on).
7
5
3 Tc=25°C
2
Single pulse
0.1
0.1 2 3 5 7 1.0
2 3 5 7 10
2 3 5 7 100
Drain-to-Source Voltage, VDS -- V IT07706
No.8028-3/4


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共有リンク

Link :


部品番号部品説明メーカ
K383

Silicon N-Channel MOS FET

Hitachi
Hitachi
K3831

MOSFET ( Transistor ) - 2SK3831

Sanyo Semicon Device
Sanyo Semicon Device


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