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K3115BのメーカーはRenesasです、この部品の機能は「N-CHANNEL POWER MOS FET」です。 |
部品番号 | K3115B |
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部品説明 | N-CHANNEL POWER MOS FET | ||
メーカ | Renesas | ||
ロゴ | |||
このページの下部にプレビューとK3115Bダウンロード(pdfファイル)リンクがあります。 Total 6 pages
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3115B
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3115B is N-Channel MOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3115B-S17-AY Note
Isolated TO-220
Note Pb-free (This product does not contain Pb in
External electrode.)
FEATURES
• Low gate charge
QG = 21 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
• Gate voltage rating : ±30 V
• Low on-state resistance
RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
600
±30
±6.0
±24
2.0
35
150
−55 to +150
6.0
24
V
V
A
A
W
W
°C
°C
A
mJ
(Isolated TO-220)
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18065EJ2V0DS00 (2nd edition)
Date Published August 2006 NS CP (K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006
1 Page 2SK3115B
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
10 ID(DC)
ID(pulse)
PW = 10 μs
100 μs
1
RDS(on) Limited
(at VGS = 10 V)
10 ms
1 ms
0.1
Power Dissipation
Tc = 25℃, Single pulse
0.01
1 10 100
1000
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-A) = 62.5°C/W
10
Rth(ch-C) = 3.57°C/W
1
0.1
0.01
100 μ
1m
10 m
100 m
1
10
PW - Pulse Width – s
Single pulse
100 1000
Data Sheet D18065EJ2V0DS
3
3Pages 2SK3115B
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
10 IAS = 6.0 A
EAS = 24 mJ
1.0
RG = 25 Ω
VDD = 150 V
VGS = 20 → 0 V
Starting Tch = 25˚C
0.1
10 μ 100 μ 1 m 10 m
L - Inductive Load - H
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
10.0±0.3
4.7±0.2
3.2±0.2
2.54±0.2
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
VDD = 150 V
100
RG = 25 Ω
VGS = 20 → 0 V
IAS ≤ 6.0 A
80
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - °C
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Body
Diode
Source (S)
1.47 MAX
0.8±0.2
2.54 TYP.
2.76±0.2
0.50±0.1
2.54 TYP.
1 23
1. Gate
2. Drain
3. Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred.
6 Data Sheet D18065EJ2V0DS
6 Page | |||
ページ | 合計 : 6 ページ | ||
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部品番号 | 部品説明 | メーカ |
K3115 | MOSFET ( Transistor ) - 2SK3115 | NEC |
K3115B | N-CHANNEL POWER MOS FET | Renesas |