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Número de pieza | IXDN609SI | |
Descripción | 9-Ampere Low-Side Ultrafast MOSFET Drivers | |
Fabricantes | IXYS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXDN609SI (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! INTEGRATED CIRCUITS DIVISION
IXD_609
9-Ampere Low-Side
Ultrafast MOSFET Drivers
Features
• 9A Peak Source/Sink Drive Current
• Wide Operating Voltage Range: 4.5V to 35V
• -40°C to +125°C Extended Operating Temperature
Range
• Logic Input Withstands Negative Swing of up to 5V
• Matched Rise and Fall Times
• Low Propagation Delay Time
• Low, 10A Supply Current
• Low Output Impedance
Applications
• Efficient Power MOSFET and IGBT Switching
• Switch Mode Power Supplies
• Motor Controls
• DC to DC Converters
• Class-D Switching Amplifiers
• Pulse Transformer Driver
Description
The IXDD609/IXDI609/IXDN609 high-speed gate
drivers are especially well suited for driving the latest
IXYS MOSFETs and IGBTs. The IXD_609
high-current output can source and sink 9A of peak
current while producing voltage rise and fall times of
less than 25ns. The input is CMOS compatible, and is
virtually immune to latch up. Proprietary circuitry
eliminates cross-conduction and current
“shoot-through.” Low propagation delay and fast,
matched rise and fall times make the IXD_609 family
ideal for high-frequency and high-power applications.
The IXDD609 is configured as a non-inverting driver
with an enable, the IXDN609 is configured as a
non-inverting driver, and the IXDI609 is configured as
an inverting driver.
The IXD_609 family is available in a standard 8-pin
DIP (PI); an 8-pin SOIC (SIA); an 8-pin Power SOIC
with an exposed metal back (SI); an 8-pin DFN (D2); a
5-pin TO-263 (YI); and a 5-pin TO-220 (CI).
Ordering Information
Part Number
IXDD609D2TR
IXDD609SI
IXDD609SITR
IXDD609SIA
IXDD609SIATR
IXDD609PI
IXDD609CI
IXDD609YI
IXDI609SI
IXDI609SITR
IXDI609SIA
IXDI609SIATR
IXDI609PI
IXDI609CI
IXDI609YI
IXDN609SI
IXDN609SITR
IXDN609SIA
IXDN609SIATR
IXDN609PI
IXDN609CI
IXDN609YI
Logic
Configuration
IN OUT
EN
IN OUT
IN OUT
Package Type
8-Pin DFN
8-Pin Power SOIC with Exposed Metal Back
8-Pin Power SOIC with Exposed Metal Back
8-Pin SOIC
8-Pin SOIC
8-Pin DIP
5-Pin TO-220
5-Pin TO-263
8-Pin Power SOIC with Exposed Metal Back
8-Pin Power SOIC with Exposed Metal Back
8-Pin SOIC
8-Pin SOIC
8-Pin DIP
5-Pin TO-220
5-Pin TO-263
8-Pin Power SOIC with Exposed Metal Back
8-Pin Power SOIC with Exposed Metal Back
8-Pin SOIC
8-Pin SOIC
8-Pin DIP
5-Pin TO-220
5-Pin TO-263
Packing
Method
Tape & Reel
Tube
Tape & Reel
Tube
Tape & Reel
Tube
Tube
Tube
Tube
Tape & Reel
Tube
Tape & Reel
Tube
Tube
Tube
Tube
Tape & Reel
Tube
Tape & Reel
Tube
Tube
Tube
Quantity
2000
100
2000
100
2000
50
50
50
100
2000
100
2000
50
50
50
100
2000
100
2000
50
50
50
DS-IXD_609-R06
www.ixysic.com
1
1 page INTEGRATED CIRCUITS DIVISION
1.7 Thermal Characteristics
Package
D2 (8-Pin DFN)
CI (5-Pin TO-220)
PI (8-Pin DIP)
SI (8-Pin Power SOIC)
SIA (8-Pin SOIC)
YI (5-Pin TO-263)
CI (5-Pin TO-220)
SI (8-Pin Power SOIC)
YI (5-Pin TO-263)
Parameter
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Symbol
JA
JC
2 IXD_609 Performance
2.1 Timing Diagrams
VIH
IN VIL
OUT
90%
10%
tondly
tr
toffdly
tf
VIH
IN VIL
OUT
90%
10%
Rating
35
36
125
85
120
46
3
10
2
toffdly
tf
2.2 Characteristics Test Diagram
IXD_609
Units
°C/W
°C/W
tondly
tr
0.1μF 10μF
+
VCC
-
VIN
IN VCC OUT
VCC
EN
GND
CLOAD
Tektronix
Current Probe
6302
R06 www.ixysic.com
5
5 Page INTEGRATED CIRCUITS DIVISION
5.4 Mechanical Dimensions
5.4.1 SIA (8-Pin SOIC)
Pin 8
1.270 REF
(0.050)
5.994 ± 0.254
(0.236 ± 0.010)
3.937 ± 0.254
(0.155 ± 0.010)
Pin 1
0.406 ± 0.076
(0.016 ± 0.003)
4.928 ± 0.254
(0.194 ± 0.010)
1.346 ± 0.076
(0.053 ± 0.003)
0.762 ± 0.254
(0.030 ± 0.010)
0.559 ± 0.254
(0.022 ± 0.010)
0.051 MIN - 0.254 MAX
(0.002 MIN - 0.010 MAX)
IXD_609
PCB Land Pattern
0.60
(0.024)
5.40
(0.213)
1.55
(0.061)
1.27
(0.050)
Dimensions
mm
(inches)
5.4.2 SI (8-Pin Power SOIC with Exposed Metal Back)
3.80
(0.150)
5.994 ± 0.254
(0.236 ± 0.010)
3.937 ± 0.254
(0.155 ± 0.010)
0.762 ± 0.254
(0.030 ± 0.010)
5.40 2.75
(0.209) (0.108)
1.55
(0.061)
Pin 1
0.406 ± 0.076
(0.016 ± 0.003)
1.270 REF
(0.050)
4.928 ± 0.254
(0.194 ± 0.010)
1.346 ± 0.076
(0.053 ± 0.003)
7º
0.051 MIN - 0.254 MAX
(0.002 MIN - 0.010 MAX)
1.27
(0.050)
0.60
(0.024)
Recommended PCB Land Pattern
2.540 ± 0.254
(0.100 ± 0.010)
3.556 ± 0.254
(0.140 ±0.010)
Dimensions
mm
(inches)
Note: The exposed metal pad on the back of the SI package should be connected to GND. It is not suitable for
carrying current.
R06 www.ixysic.com
11
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet IXDN609SI.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXDN609SI | 9-Ampere Low-Side Ultrafast MOSFET Drivers | IXYS |
IXDN609SIA | 9-Ampere Low-Side Ultrafast MOSFET Drivers | IXYS |
IXDN609SIATR | 9-Ampere Low-Side Ultrafast MOSFET Drivers | IXYS |
IXDN609SITR | 9-Ampere Low-Side Ultrafast MOSFET Drivers | IXYS |
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