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IXDD609YI の電気的特性と機能

IXDD609YIのメーカーはIXYSです、この部品の機能は「9-Ampere Low-Side Ultrafast MOSFET Drivers」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXDD609YI
部品説明 9-Ampere Low-Side Ultrafast MOSFET Drivers
メーカ IXYS
ロゴ IXYS ロゴ 




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IXDD609YI Datasheet, IXDD609YI PDF,ピン配置, 機能
INTEGRATED CIRCUITS DIVISION
IXD_609
9-Ampere Low-Side
Ultrafast MOSFET Drivers
Features
9A Peak Source/Sink Drive Current
Wide Operating Voltage Range: 4.5V to 35V
-40°C to +125°C Extended Operating Temperature
Range
Logic Input Withstands Negative Swing of up to 5V
Matched Rise and Fall Times
Low Propagation Delay Time
Low, 10A Supply Current
Low Output Impedance
Applications
Efficient Power MOSFET and IGBT Switching
Switch Mode Power Supplies
Motor Controls
DC to DC Converters
Class-D Switching Amplifiers
Pulse Transformer Driver
Description
The IXDD609/IXDI609/IXDN609 high-speed gate
drivers are especially well suited for driving the latest
IXYS MOSFETs and IGBTs. The IXD_609
high-current output can source and sink 9A of peak
current while producing voltage rise and fall times of
less than 25ns. The input is CMOS compatible, and is
virtually immune to latch up. Proprietary circuitry
eliminates cross-conduction and current
“shoot-through.” Low propagation delay and fast,
matched rise and fall times make the IXD_609 family
ideal for high-frequency and high-power applications.
The IXDD609 is configured as a non-inverting driver
with an enable, the IXDN609 is configured as a
non-inverting driver, and the IXDI609 is configured as
an inverting driver.
The IXD_609 family is available in a standard 8-pin
DIP (PI); an 8-pin SOIC (SIA); an 8-pin Power SOIC
with an exposed metal back (SI); an 8-pin DFN (D2); a
5-pin TO-263 (YI); and a 5-pin TO-220 (CI).
Ordering Information
Part Number
IXDD609D2TR
IXDD609SI
IXDD609SITR
IXDD609SIA
IXDD609SIATR
IXDD609PI
IXDD609CI
IXDD609YI
IXDI609SI
IXDI609SITR
IXDI609SIA
IXDI609SIATR
IXDI609PI
IXDI609CI
IXDI609YI
IXDN609SI
IXDN609SITR
IXDN609SIA
IXDN609SIATR
IXDN609PI
IXDN609CI
IXDN609YI
Logic
Configuration
IN OUT
EN
IN OUT
IN OUT
Package Type
8-Pin DFN
8-Pin Power SOIC with Exposed Metal Back
8-Pin Power SOIC with Exposed Metal Back
8-Pin SOIC
8-Pin SOIC
8-Pin DIP
5-Pin TO-220
5-Pin TO-263
8-Pin Power SOIC with Exposed Metal Back
8-Pin Power SOIC with Exposed Metal Back
8-Pin SOIC
8-Pin SOIC
8-Pin DIP
5-Pin TO-220
5-Pin TO-263
8-Pin Power SOIC with Exposed Metal Back
8-Pin Power SOIC with Exposed Metal Back
8-Pin SOIC
8-Pin SOIC
8-Pin DIP
5-Pin TO-220
5-Pin TO-263
Packing
Method
Tape & Reel
Tube
Tape & Reel
Tube
Tape & Reel
Tube
Tube
Tube
Tube
Tape & Reel
Tube
Tape & Reel
Tube
Tube
Tube
Tube
Tape & Reel
Tube
Tape & Reel
Tube
Tube
Tube
Quantity
2000
100
2000
100
2000
50
50
50
100
2000
100
2000
50
50
50
100
2000
100
2000
50
50
50
DS-IXD_609-R06
www.ixysic.com
1

1 Page





IXDD609YI pdf, ピン配列
INTEGRATED CIRCUITS DIVISION
1 Specifications
1.1 Pin Configurations
IXDD609 D2 / PI / SI / SIA
VCC 1
IN 2
EN 3
GND 4
8 VCC
7 OUT
6 OUT
5 GND
IXDD609 CI / YI
VCC 1
OUT 2
GND 3
IN 4
EN 5
IXDI609 PI / SI / SIA
VCC 1
IN 2
NC 3
GND 4
8 VCC
7 OUT
6 OUT
5 GND
IXDI609 CI / YI
VCC 1
OUT 2
GND 3
IN 4
NC 5
IXDN609 PI / SI / SIA
VCC 1
IN 2
NC 3
GND 4
8 VCC
7 OUT
6 OUT
5 GND
IXDN609 CI / YI
VCC 1
OUT 2
GND 3
IN 4
NC 5
IXD_609
1.2 Pin Definitions
Pin Name
IN
EN
OUT
OUT
VCC
GND
NC
Description
Logic Input
Output Enable - Drive pin low to disable output,
and force output to a high impedance state
Output - Sources or sinks current to turn-on or
turn-off a discrete MOSFET or IGBT
Inverted Output - Sources or sinks current to
turn-on or turn-off a discrete MOSFET or IGBT
Supply Voltage - Provides power to the device
Ground - Common ground reference for the
device
Not connected
1.3 Absolute Maximum Ratings
Parameter
Supply Voltage
Input Voltage
Output Current
Junction Temperature
Storage Temperature
Symbol
VCC
VIN, VEN
IOUT
TJ
TSTG
Minimum
-0.3
-5
-
-55
-65
Maximum
40
VCC+0.3
±9
+150
+150
Units
V
V
A
°C
°C
Unless stated otherwise, absolute maximum electrical ratings are at 25°C
Absolute maximum ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device.
Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not
implied.
1.4 Recommended Operating Conditions
Parameter
Supply Voltage
Operating Temperature Range
Symbol
VCC
TA
Range
4.5 to 35
-40 to +125
Units
V
°C
R06 www.ixysic.com
3


3Pages


IXDD609YI 電子部品, 半導体
INTEGRATED CIRCUITS DIVISION
3 Block Diagrams & Truth Tables
3.1 IXDD609
V
CC
3.3 IXDN609
IN
IN
OUT
EN
IN
0
1
x
3.2 IXDI609
EN
1 or open
1 or open
0
GND
OUT
0
1
Z
VCC
IN
0
1
IXD_609
VCC
OUT
GND
OUT
0
1
IN OUT
GND
IN OUT
01
10
6
www.ixysic.com
R06

6 Page



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部品番号部品説明メーカ
IXDD609YI

9-Ampere Low-Side Ultrafast MOSFET Drivers

IXYS
IXYS


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