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BM60054FV-C の電気的特性と機能

BM60054FV-CのメーカーはROHM Semiconductorです、この部品の機能は「1ch Gate Driver Providing Galvanic Isolation」です。


製品の詳細 ( Datasheet PDF )

部品番号 BM60054FV-C
部品説明 1ch Gate Driver Providing Galvanic Isolation
メーカ ROHM Semiconductor
ロゴ ROHM Semiconductor ロゴ 




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BM60054FV-C Datasheet, BM60054FV-C PDF,ピン配置, 機能
Datasheet
Gate Driver Providing Galvanic isolation Series
Isolation voltage 2500Vrms
1ch Gate Driver Providing Galvanic Isolation
BM60054FV-C
General Description
The BM60054FV-C is a gate driver with isolation voltage
2500Vrms, I/O delay time of 110ns, and a minimum input
pulse width of 90ns. Fault signal output function, ready
signal output function, under voltage lockout (UVLO)
function, short current protection (SCP) function, and
switching controller function are all built-in.
Features
Provides Galvanic Isolation
Fault Signal Output Function
Ready Signal Output Function
Under Voltage Lockout Function
Short Circuit Protection Function
Soft Turn-Off Function for Short Circuit Protection
(Adjustable Turn-OFF time)
Thermal Protection Function
Active Miller Clamping
Switching Controller Function
Output State Feedback Function
UL1577 Recognized:File No. E356010
AEC-Q100 Qualified(Note 1)
(Note 1:Grade1)
Key Specifications
Isolation Voltage:
Maximum Gate Drive Voltage:
I/O Delay Time:
Minimum Input Pulse Width:
2500Vrms
20V(Max)
110ns(Max)
90ns(Max)
Package
SSOP-B28W
W(Typ) x D(Typ) x H(Max)
9.2 mm x 10.4 mm x 2.4 mm
Applications
Driving IGBT Gate
Driving MOSFET Gate
Typical Application Circuit
Figure 1. Typical Application Circuit
Product structureSilicon integrated circuit
.www.rohm.co.jp
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product has no designed protection against radioactive rays
1/35
TSZ02201-0818ABH00080-1-2
10.Apr.2015 Rev.001

1 Page





BM60054FV-C pdf, ピン配列
BM60054FV-C
Recommended Range of External Constants
Pin Name
Symbol
VREG
VCC2
RT
CVREG
CVCC2
RRT
Recommended Value
Min Typ Max
1.0 3.3 10.0
0.33 -
-
24 68 150
Unit
µF
µF
kΩ
Pin Configuration
(TOP VIEW)
Pin Descrlptions
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
VEE2
PROOUT
VTSIN
SCPIN
NC
GND2
MODE
UVLOIN
VCC2
NC
OUT1H
OUT1L
OUT2
VEE2
1
2
3
4
5
6
7
8
9
10
11
112
13
14
828 GND1
827 SENSE
826 FET_G
825 VREG
824 V_BATT
823 COMP
822 FB
821 RT
820 RDY
8819198
INB
INA
817 ENA
816 FLT
815 GND1
Pin Name
VEE2
PROOUT
VTSIN
SCPIN
NC
GND2
MODE
UVLOIN
VCC2
NC
OUT1H
OUT1L
OUT2
VEE2
GND1
FLT
ENA
INA
INB
RDY
RT
FB
COMP
V_BATT
VREG
FET_G
SENSE
GND1
Pin Function
Output-side negative power supply pin
Soft turn-off pin / Gate voltage input pin
Thermal detection pin
Short circuit current detection pin
No connection
Output-side ground pin
Mode selection pin of output-side UVLO
Output-side UVLO setting pin
Output-side positive power supply pin
No connection
Source side output pin
Sink side output pin
Output pin for Miller Clamp
Output-side negative power supply pin
Input-side ground pin
Fault output pin
Input enabling signal pin
Control input pin A
Control input pin B
Ready output pin
Switching frequency setting pin for switching controller
Error amplifier inverting input pin for switching controller
Error amplifier output pin for switching controller
Main power supply pin
Input-side internal power supply pin
MOS FET control pin for switching controller
Current detection pin for switching controller
Input-side ground pin
www.rohm.co.jp
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
3/35
TSZ02201-0818ABH00080-1-2
10.Apr.2015 Rev.001


3Pages


BM60054FV-C 電子部品, 半導体
BM60054FV-C
Electrical Characteristics continued
(Unless otherwise specified Ta=-40°C to +125°C, VBATT=4.0V to 32V, VCC2=UVLO to 20V, VEE2=-12V to 0V)
Parameter
Symbol
Min
Typ Max Unit
Conditions
Output
OUT1H ON-Resistance
OUT1L ON-Resistance
OUT1 Maximum Current
PROOUT ON-Resistance
RONH
RONL
IOUT1MAX
RONPRO
0.50
0.25
3.0
0.45
0.85
0.45
4.5
0.85
1.45
0.80
-
1.55
Ω IOUT1H=40mA
Ω IOUT1L=40mA
A
VCC2=15V
Design assurance
Ω IPROOUT=40mA
Turn ON Time
tPONA
tPONB
45
50
75 105 ns INA=PWM, INB=L
80 110 ns INA=H, INB=PWM
Turn OFF Time
tPOFFA
tPOFFB
40
35
70 100 ns INA=PWM, INB=L
65 95 ns INA=H, INB=PWM
Propagation Distortion
tPDISTA
-25
-5
15 ns tPOFFA tPONA
tPDISTB
-35
-15
5 ns tPOFFB tPONB
Rise Time
tRISE
-
50
- ns 10nF between OUT1-VEE2
Fall Time
OUT2 ON-Resistance
tFALL
RON2
-
0.25
50
0.45
-
0.80
ns Design assurance
Ω IOUT2=40mA
OUT2 ON Threshold Voltage
VOUT2ON
1.8
2
2.2 V Relative to VEE2
Common Mode Transient Immunity
CM
100
-
- kV/μs Design assurance
Protection Functions
Output-side UVLO ON
Threshold Voltage
VUVLOINL
0.85
0.90 0.95 V UVLOIN, MODE=L
Output-side UVLO Threshold
Hysteresis
Output-side UVLO ON Voltage
Output-side UVLO Hysteresis
VUVLOINHYS
VUVLO2L
VUVLO2HYS
0.10×
VUVLOINL
10.9
0.8
0.11×
VUVLOINL
11.5
1.2
0.12×
VUVLOINL
12.1
1.6
V UVLOIN, MODE=L
V VCC2, MODE=H
V VCC2, MODE=H
Output-side UVLO Filtering Time
tUVLO2FIL
0.25
1.5
3.7 µs
DESAT Leading Edge
Blanking Time
tDESATleb
0.14
0.20 0.26 µs Design assurance
Short Current Detection Voltage
VSCDET
0.47
0.50 0.53 V Relative to GND2
Short Current Detection Filter Time
tSCPFIL
0.12
0.2 0.28 µs
Short Current Detection Delay
Time (PROOUT)
tSCPPRO
0.26
0.38 0.50 µs
SCPIN Pin Low Voltage
VSCPINL
-
0.1
0.22
V ISCPIN=1mA
Output Delay Difference
between PROOUT and FLT
tPROFLT
0.1
0.4
0.7 µs
Thermal Detection Voltage
VTSDET
1.61
1.70 1.79 V Relative to GND2
Thermal Detection Filter Time
tTSFIL
4
10 30 µs
Soft Turn Off Release Time
tSTO
30
- 110 µs
FLT Output Low Voltage
VFLTL
-
0.18
0.40
V IFLT=5mA
Gate State H Detection
Threshold Voltage
VOSFBH
4.5
5.0
5.5 V Relative to GND2
Gate State L Detection
Threshold Voltage
VOSFBL
4.0
4.5
5.0 V Relative to GND2
OSFB Output Filtering Time
tOSFBFIL
1.5
2.0
2.5 µs
RDY Output Low Voltage
VRDYL
-
0.18
0.40
V IRDY=5mA
INA
50%
tPON
50%
tPOFF
OUT1H/L
50%
10%
tRISE
90%
90%
50%
tFALL
10%
Figure 2. INA-OUT1H/L Timing Chart
www.rohm.co.jp
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
6/35
TSZ02201-0818ABH00080-1-2
10.Apr.2015 Rev.001

6 Page



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部品番号部品説明メーカ
BM60054FV-C

1ch Gate Driver Providing Galvanic Isolation

ROHM Semiconductor
ROHM Semiconductor


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