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D5N40 の電気的特性と機能

D5N40のメーカーはSemiHowです、この部品の機能は「HFD5N40」です。


製品の詳細 ( Datasheet PDF )

部品番号 D5N40
部品説明 HFD5N40
メーカ SemiHow
ロゴ SemiHow ロゴ 




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D5N40 Datasheet, D5N40 PDF,ピン配置, 機能
July 2005
HFD5N40 / HFU5N40
400V N-Channel MOSFET
BVDSS = 400 V
RDS(on) typ = 1.27 Ω
ID = 3.4 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 13 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 1.27 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD5N40
1
2
3
HFU5N40
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
400
3.4
2.15
13.6
±30
510
3.4
4.5
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25)
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
45
0.36
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.78
50
110
Units
℃/W
SEMIHOW REV.A0,July 2005

1 Page





D5N40 pdf, ピン配列
Typical Characteristics
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
900
800
700
600
500
400
300
200
100
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Note ;
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 80V
10 VDS = 200V
VDS = 320V
8
6
4
2
* Note : I = 4.5A
D
0
0 2 4 6 8 10 12 14
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
SEMIHOW REV.A0,July 2005


3Pages


D5N40 電子部品, 半導体
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
SEMIHOW REV.A0,July 2005

6 Page



ページ 合計 : 8 ページ
 
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共有リンク

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部品番号部品説明メーカ
D5N40

HFD5N40

SemiHow
SemiHow


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