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K13A25D の電気的特性と機能

K13A25DのメーカーはToshiba Semiconductorです、この部品の機能は「TK13A25D」です。


製品の詳細 ( Datasheet PDF )

部品番号 K13A25D
部品説明 TK13A25D
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 




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K13A25D Datasheet, K13A25D PDF,ピン配置, 機能
MOSFETs Silicon N-Channel MOS (π-MOS)
TK13A25D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.19 (typ.)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V)
(3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK13A25D
TO-220SIS
1: Gate (G)
2: Drain (D)
3: Source (S)
1 2011-10-10
Rev.2.0

1 Page





K13A25D pdf, ピン配列
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
Test Condition
IGSS
IDSS
V(BR)DSS
Vth
RDS(ON)
VGS = ±20 V, VDS = 0 V
VDS = 250 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 6.5 A
Min
250
1.5
6.2. Dynamic Characteristics (Ta = 25unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Ciss
Crss
Coss
rg
tr
ton
tf
toff
Test Condition
VDS = 100 V, VGS = 0 V, f = 1 MHz
VDS = OPEN, f = 1 MHz
See Figure 6.2.1.
Min
TK13A25D
Typ. Max Unit
±1
10

3.5
0.19 0.25
µA
V
Typ.
1100
8
66
5
40
55
20
130
Max
Unit
pF
ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Qg
Test Condition
VDD 200 V, VGS = 10 V, ID = 13 A
Qgs1
Qgd
Min Typ. Max Unit
25 nC
4.2
8.5
6.4. Source-Drain Characteristics (Ta = 25unless otherwise specified)
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Symbol
VDSF
trr
Qrr
Irr
Test Condition
IDR = 13 A, VGS = 0 V
IDR = 13 A, VGS = 0 V
-dIDR/dt = 100 A/µs
Min Typ. Max Unit
  -1.7 V
180
ns
1.1 µC
12
A
3 2011-10-10
Rev.2.0


3Pages


K13A25D 電子部品, 半導体
TK13A25D
Fig. 8.7 RDS(ON) - Ta
Fig. 8.8 IDR - VDS
Fig. 8.9 C - VDS
Fig. 8.10 Vth - Ta
Fig. 8.11 PD - Tc
(Guaranteed Maximum)
Fig. 8.12 Dynamic Input/Output Characteristics
6 2011-10-10
Rev.2.0

6 Page



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部品番号部品説明メーカ
K13A25D

TK13A25D

Toshiba Semiconductor
Toshiba Semiconductor


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