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FW241 の電気的特性と機能

FW241のメーカーはSanyo Semicon Deviceです、この部品の機能は「Ultrahigh-Speed Swiching Applications」です。


製品の詳細 ( Datasheet PDF )

部品番号 FW241
部品説明 Ultrahigh-Speed Swiching Applications
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




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FW241 Datasheet, FW241 PDF,ピン配置, 機能
Ordering number : ENN6939
FW241
N-Channel Silicon MOSFET
FW241
Ultrahigh-Speed Swiching Applications
Features
Package Dimensions
This composite device allows high density mounting by unit : mm
incorporating two MOSFET chips in one package that 2129
feature low on-resistance, ultrahigh switching speed, and
drive voltage of 4.5V.
The two chips have near characteristics, and especially
8
suited for HDD.
[FW241]
5
1
5.0
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
0.2 5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Specifications
Absolute Maximum Ratings at Ta=25°C
0.595 1.27 0.43
SANYO : SOP8
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (2000mm2!0.8mm)1unit
Tc=25°C
Ratings
30
±20
3.5
14
1.4
2.0
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Forward Transfer Admittance
Marking : W241
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(th)
yfs
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=VGS, ID=250µA
VDS=10V, ID=3.5A
min
30
1.2
3.7
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.5 V
5.3 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42501 TS IM TA-3130 No.6939-1/4

1 Page





FW241 pdf, ピン配列
FW241
yfs-- ID
10
7 VDS=10V
5
3
2
1.0
Ta= --25°C 75°C
7 25°C
5
3
2
0.1
0.01 2 3 5 7 0.1 2 3 5 7 1.0
Drain Current, ID -- A
SW Time -- ID
100
7
VDD=15V
VGS=10V
5
23
5 7 10
IT02680
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
1000
7
5
3
td(off)
2
3
2
IF -- VSD
VGS=0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
IT02681
f=1MHz
Ciss
10
7 td(on)
5
3 tr
2
1.0
0.1
23
10
VDS=10V
9 ID=3.5A
8
5 7 1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 10
IT02682
7
6
5
4
3
2
1
0
0123456
Total Gate Charge, Qg -- nC
IT02684
PD -- Tc
2.5
100
7
5 Coss
3 Crss
2
10
0
5 10 15 20
Drain-to-Source Voltage, VDS -- V IT02683
ASO
5
3
2 IDP=14A
<10µs
10
7
5
ID=3.5A
3
2
100µs
1ms
1.0
7
5
3
2
Operation in this
area is limited by
RDS(DoCn)o.perati1o0nms
0.1 100ms
7 Tc=25°C
5 Single pulse
3
2 1unit
0.01 Mounted on a ceramic board(2000mm2!0.8mm)
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain-to-Source Voltage, VDS -- V IT02685
2.0
1.5
1.0
0.5
0
0 20 40 60 80 100 120 140 160
Case Tamperature, Tc -- °C
IT02686
No.6939-3/4


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共有リンク

Link :


部品番号部品説明メーカ
FW241

Ultrahigh-Speed Swiching Applications

Sanyo Semicon Device
Sanyo Semicon Device
FW243

DC/DC Converter Applications

Sanyo Semicon Device
Sanyo Semicon Device
FW245

DC / DC Converter Applications

Sanyo Semicon Device
Sanyo Semicon Device


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