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FW238 の電気的特性と機能

FW238のメーカーはSanyo Semicon Deviceです、この部品の機能は「Load Switching Applications」です。


製品の詳細 ( Datasheet PDF )

部品番号 FW238
部品説明 Load Switching Applications
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




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FW238 Datasheet, FW238 PDF,ピン配置, 機能
Ordering number : ENN6673
Features
Low ON-resistance.
4V drive.
FW238
N-Channel Silicon MOSFET
FW238
Load Switching Applications
Package Dimensions
unit : mm
2129
[FW238]
85
Specifications
Absolute Maximum Ratings at Ta=25°C
1
5.0
4
0.595 1.27 0.43
1 : Source1
2 : Gate1
3 : Source2
0.2 4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (1500mm2!0.8mm) 1unit
Mounted on a ceramic board (1500mm2!0.8mm)
Ratings
30
±20
5
52
1.7
2.0
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=10V
ID=4A, VGS=4V
min
30
1.0
4.9
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.4 V
7.0 S
37 49 m
52 73 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1000 TS IM TA-2904 No.6673-1/4

1 Page





FW238 pdf, ピン配列
FW238
100 yfs-- ID
7 VDS=10V
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
0.01
10000
7
5
3
2
25°C
Ta=
--
25°C
75°C
2 3 5 7 0.1 2 3 5 7 1.0 2 3
Drain Current, ID -- A
Ciss, Coss, Crss -- VDS
5 7 10
IT02269
f=1MHz
1000
7
5
3
2
100
7
5
3
2
10
0
1000
7
5
3
2
Ciss
Coss
Crss
5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT02271
SW Time -- ID
VDD=15V
VGS=10V
100
7
5
3
2
10
7
5
3
2
1.0
0.1
2.5
td(off)
tf
td(on)
tr
23
5 7 1.0
23
Drain Current, ID -- A
PD -- Ta
5 7 10
IT02273
10
7
5
VGS=0
3
2
IF -- VSD
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Diode Forward Voltage, VSD -- V
VGS -- Qg
10
VDS=10V
9 ID=5A
8
0.9 1.0
IT02270
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14
Total Gate Charge, Qg -- nC
IT02272
ASO
100
7 IDP=52A
<10µs
5
3
2
1ms 100µs
10
7
5
ID=5A
3
2
1.0
7
5 Operation in this
DC
100m1s0ms
operation
3
2
area is limited by RDS(on).
0.1
7
5
Ta=25°C
3 Single pulse
2 Mounted on a ceramic board(1500mm2!0.8mm) 1unit
0.01
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain-to-Source Voltage, VDS -- V IT02274
2.0
1.7
1.5
1.0
1 unit Total dissipation
0.5
Mounted on a ceramic board(1500mm2!0.8mm)
0
0 20 40 60 80 100 120 140
160
Amibient Tamperature, Ta -- °C IT02275
No.6673-3/4


3Pages





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共有リンク

Link :


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