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FW231 の電気的特性と機能

FW231のメーカーはSanyo Semicon Deviceです、この部品の機能は「Load Switching Applications」です。


製品の詳細 ( Datasheet PDF )

部品番号 FW231
部品説明 Load Switching Applications
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




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FW231 Datasheet, FW231 PDF,ピン配置, 機能
Ordering number:ENN6071A
Features
· Low ON resistance.
· 2.5V drive.
N-Channel Silicon MOSFET
FW231
Load Switching Applications
Package Dimensions
unit:mm
2129
[FW231]
85
1
5.0
4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
0.595 1.27 0.43
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm2×0.8mm)
1 : Source1
2 : Gate1
0.2 3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Ratings
20
±10
9
52
1.7
2.0
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : W231
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=9A
ID=9A, VGS=4V
ID=2A, VGS=2.5V
Ratings
min typ max
Unit
20 V
1 µA
±10 µA
0.4 1.3 V
16 24
S
15 20 m
20 27 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52200TS (KOTO) TA-2076 No.6071-1/4

1 Page





FW231 pdf, ピン配列
40
35
30
25
20
15
10
5
0
-50
10000
7
5
3
2
RDS(on) - Ta
I DI D==29AA,V,VGGS=S=24.5VV
FW231
3
2 VGS= 0
10
7
5
3
2
1.0
7
5
3
2
IF - VSD
-25 0 25 50 75 100 125 150
Ambient Temperature, Ta – ˚C
Ciss, Coss, Crss - VDS
f = 1MHz
0.1
7
5
3
2
0.010.2
10
9
0.3 0.4
0.5 0.6 0.7 0.8
0.9
Diode Forward Voltage, VSD – V
VGS - Qg
8
7
Ciss
6
1.0
1000
5
74
5 Coss
Crss 3
3
2
2
1
100
0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS – V
1000
7
VDD =10V
VGS=4V
5
3
2
SW Time - ID
td(off)
tf
100
7 tr
5
3 td(on)
2
10
7 0.1
2.4
2 3 5 7 1.0
2 3 5 7 10
Drain Current, ID – A
P D - Ta
2
00 10 20 30 40 50 60
Total Gate Charge, Qg – nC
ASO
100
7
IDP = 5 2 A
5
3
2
10 ID=9A
7
5
3
2
1.0
7
Operation in this area
5 is limited by RDS(on).
3
10µs
1ms
10ms
100ms
DC operation
2
0.1
7
5
Ta=25°C
3
2
Single pulse
1 unit
Mounted on a
ceramic
board
(1000mm2×0.8mm)
0.01
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Drain-to-Source Voltage, VDS – V
23
2.0
1.7
1.6
1.2
1
Total
unit
Dissipation
0.8
0.4
0
Mounted
0 20
on
a ceramic
40 60
board (1000mm2×0.8mm)
80 100 120 140
Ambient Temperature, Ta – ˚C
160
No.6071-3/4


3Pages





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共有リンク

Link :


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FW231

Load Switching Applications

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