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FW214 の電気的特性と機能

FW214のメーカーはSanyo Semicon Deviceです、この部品の機能は「Ultrahigh-Speed Switching Applications」です。


製品の詳細 ( Datasheet PDF )

部品番号 FW214
部品説明 Ultrahigh-Speed Switching Applications
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




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FW214 Datasheet, FW214 PDF,ピン配置, 機能
U . c o mOrdering number :EN5850
N-Channel Silicon MOS FET
D a t a S h e e t 4 Ultrahigh-Speed Switching AppliFcaWti2o1n4sFeatures
.· Low ON resistance.
w w w m· 2.5V drive.
Package Dimensions
unit:mm
2129
[FW214]
85
U.co1
5.0
4
e t 4Specifications
eAbsolute Maximum Ratings at Ta = 25˚C
0.595 1.27 0.43
hParameter
Drain-to-Source Voltage
SGate-to-Source Voltage
Drain Current (DC)
aDrain Current (pulse)
tAllowable Power Dissipation
Total Dissipation
aChannel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on ceramic board (1200mm2×0.8mm) 1unit
Mounted on ceramic board (1200mm2×0.8mm)
1:Source1
2:Gate1
3:Source2
4:Gate2
0.2 5:Drain2
6:Drain2
7:Drain1
8:Drain1
SANYO:SOP8
Ratings
20
±10
5
48
1.7
2.0
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
DElectrical Characteristics at Ta = 25˚C
.Parameter
wD-S Breakdown Voltage
Zero Gate Voltage Drain Current
wGate-to-Source Leak Current
mCutoff Current
oForward Transfer Admittance
w cStatic Drain-to-Source ON-State Resistance
U .Input Capacitance
4Output Capacitance
tReverse Transfer Capacitance
eTurn-ON Delay Time
eRise Time
hTurn-OFF Delay Time
SFall Time
aTotal Gate Charge
tGate-to-Source Charge
aGate-to-Drain ("Miller") Charge
. DDiode Forward Voltage
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=4V
ID=2A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=5A
VDS=10V, VGS=10V, ID=5A
VDS=10V, VGS=10V, ID=5A
IS=5A, VGS=0
Ratings
min typ
20
0.4
8 13
38
50
500
280
150
20
250
70
130
22
3
3
1.0
max
100
±10
1.3
50
70
1.2
Unit
V
µA
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
SANYO Electric Co.,Ltd. Semiconductor Bussiwnewss HeadquartersTOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
w 52698TS (KOTO) TA-0974 No.5850-1/3

1 Page





FW214 pdf, ピン配列
FW214
Ciss,Coss,Crss - VDS
10000
7 f = 1MHz
5
3
2
1000
7
5
Ciss
3 Coss
2
Crss
100
7
5
3
2
10
02
1000
7
VDD =10V
5 VGS=4V
3
2
100
7
5
3
2
4 6 8 10 12 14 16
Drain-to-Source Voltage,VDS – V
SW Time - I D
18
tr tf
t d(off)
t d(on)
20
10
7
5
3
2
1.0
7 0.1
2 3 5 7 1.0 2 3 5 7 10
Drain Current, ID – A
2
P D(FET2) - P D(FET1)
2.0
10 VDS=10V
9 ID=5A
VGS - Qg
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
Total Gate Charge, Qg – nC
ASO
100
10572357,,,,IDP,,,,=48,,,,A ,,,,,,,,,,,,,,,,,,,,
10µs
100µs
1m
10
3
2
100ms
ID=5A
1.0
7
5
Operation in this
area is limited by
DC operation
3 RDS(on).
2 Ta= 25˚C
1pulse
0.1 1unit
7 Mounted on ceramic board (1200mm2×0.8mm)
5
2 3 5 7 0.1
2 3 5 7 1.0
2
Drain -to-Source Voltage, VDS - V
22
3
2.5 P D - Ta
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Mounted on ceramic board (1200mm×20.8mm)
2.0
1.7
1.5
1.0
Total
1 unit
Dissipation
0.4 0.5
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Allowable Dissipation, PD(FET 1) – W
Mounted on ceramic board (1200mm2×0.8mm)
0
0 20 40 60 80 100 120
Ambient Temperature, Ta – ˚C
140
160
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.5850-3/3


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共有リンク

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