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PDF IXGN60N60C2 Data sheet ( Hoja de datos )
| Número de pieza | IXGN60N60C2 | |
| Descripción | IGBT | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFASTTM IGBTs
with Diode
IXGN60N60C2
IXGN60N60C2D1
C2-Class High Speed IGBTs
VCES =
IC110 =
VCE(sat)
trr
≤
=
600V
60A
2.5V
35ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1 MΩ
Continuous
Transient
TC = 25°C (Limited by Leads)
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped Inductive Load
TC = 25°C
50/60 Hz
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting Torque
Terminal Connection Torque (M4)
E
60C2
E
60C2D1
Maximum Ratings
600
600
V
V
±20 V
±30 V
75 A
60 A
300 A
ICM = 100
@ VCE ≤ 600
480
A
V
W
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
ICES
IGES
VCE(sat)
IC = 250μA, VCE = VGE
VCE = VCES
VGE = 0V
TJ = 125°C
VCE = 0V, VGE = ±20V
IC = 50A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
3.0 5.0 V
650 μA
5 mA
±100 nA
2.1 2.5 V
1.8 V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c Either Emitter Terminal can be used as
Main or Kelvin Emitter
Features
z International Standard Package
miniBLOC
z Aluminium Nitride Isolation
- High Power Dissipation
z Anti-Parallel Ultra Fast Diode
z Isolation Voltage 3000 V~
z LCoowndVuCcEt(isoatn) foLrosMsiensimum On-State
z MOS Gate Turn-on
- Drive Simplicity
z Low Collector-to-Case Capacitance
(< 50 pF)
z Low Package Inductance (< 5 nH)
- Easy to Drive and to Protect
Applications
z AC Motor Speed Control
z DC Servo and Robot Drives
z DC Choppers
z Uninterruptible Power Supplies (UPS)
z Switch-Mode and Resonant-Mode
Power Supplies
Advantages
z Easy to Mount with 2 Screws
z Space Savings
z High Power Density
© 2009 IXYS CORPORATION, All Rights Reserved
DS99177A(01/09)
1 page  
160
A
140
IF 120
100
80
60
TVJ= 150°C
100°C
25°C
40
20
0
0 1 2V
VF
Fig. 13. Forward Current IF Versus VF
2.0
1.5
Kf
1.0
0.5
IRM
QRM
4000
nC
3000
Qr
TVVRJ==
100°C
300V
2000
IF= 120A, 60A, 30A
1000
0
100
A/μs 1000
-diF/dt
Fig. 14. Reverse Recorvery Charge Qr
Versus -diF/dt
140
ns
130
trr
120
TVJ= 100°C
VR = 300V
110 IF= 30A, 60A, 120A
100
90
0.0
0
40 80 120 °C 160
TVJ
Fig. 16. Dynamic Paraments Qr, IRM
Versus TvJ
11.000
K/W
0.1
ZthJC
0.100
0.01
80
0
200 400 600 A8/0μ0s 1000
-diF/dt
Fig. 17. Recorvery Time trr Versus
-diF/dt
IXGN60N60C2
IXGN60N60C2D1
80
A
60
IRM
TVJ= 100°C
VR = 300V
IF= 120A, 60A, 30A
40
20
0
0 200 400 600 A8/0μ0s 1000
-diF/dt
Fig. 15. Peak Reverse Current IRM
Versus -diF/dt
20
V
VFR
15
TVJ= 100°C
IF = 60A
trr
VFR
1.6
μs
tfr
1.2
10 0.8
5 0.4
0 0.0
0 200 400 600 A80/μ0s 1000
diF/dt
Fig. 18. Peak Forward Voltage VRM
and trr Versus -diF/dt
0.0001.010
0.0001
0.00001
0.001
0.0001
0.001
0.01
0.1
DSEP 2x61-06A
s1
t
F0ig.0.02017. Maximum Transie0n.0t 0T1hermal Impeadance 0J.u0e1 ctioPnulstoe CWaidsteh [(fsor] Dio0d.e1)
Fig. 27. Maximum Transient Thermal Impedance (for diode)
1
10
© 2009 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXGN60N60C2.PDF ] | |
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