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PDF MDF12N50TH Data sheet ( Hoja de datos )
| Número de pieza | MDF12N50TH | |
| Descripción | N-Channel MOSFET 500V | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDF12N50
N-Channel MOSFET 500V, 11.5 A, 0.65Ω
General Description
The MDF12N50 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF12N50 is suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 500V
ID = 11.5A
RDS(ON) ≤ 0.65Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
G DS
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (※)
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
※ Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
G
S
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
Dv/dt
EAS
TJ, Tstg
Rating
500
±30
11.5
7.0
46
42
0.32
4.5
460
-55~150
Unit
V
V
A
A
A
W
W/ oC
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
3.0
Unit
oC/W
Dec 2009. Version 1.2
1
MagnaChip Semiconductor Ltd.
Free Datasheet http://www.datasheet4u.com/
1 page  
10 ※ Note : ID = 11.5A
8
6
100V
250V
400V
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
Operation in This Area
is Limited by R
DS(on)
101
100
10 µs
100 µs
1 ms
10 ms
100 ms
DC
10-1
10-2
10-1
Single Pulse
TJ=Max rated
TC=25℃
100 101 102
-VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
1600
1400
1200
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
800
Coss
600
400 Crss
200
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
0.1 1 10
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
14
12
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature [℃]
Fig.10 Maximum Drain Current vs. Case
Temperature
D=0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
10-2
10-5
single pulse
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JA=110℃/W
10-4 10-3 10-2 10-1 100
t1, Rectangular Pulse Duration [sec]
101
Fig.11 Transient Thermal Response Curve
10000
8000
single Pulse
RthJC = 3.0℃/W
TC = 25℃
6000
4000
2000
0
1E-5 1E-4 1E-3 0.01
0.1
1
10
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation
Dec 2009. Version 1.2
5
MagnaChip Semiconductor Ltd.
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MDF12N50TH.PDF ] | |
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