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GR3281 の電気的特性と機能

GR3281のメーカーはGreenwichです、この部品の機能は「NON-VOLATILE RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 GR3281
部品説明 NON-VOLATILE RAM
メーカ Greenwich
ロゴ Greenwich ロゴ 




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GR3281 Datasheet, GR3281 PDF,ピン配置, 機能
GR3281 (32K x 8)
NON-VOLATILE RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Vdd
Vi/o
Temp
Min
– 0.3
– 0.3
– 20
Max
7.0
Vdd +0.3
+70
Units
Volts
Volts
deg. C
DESCRIPTION
The GR3281 is a 32768 word by 8 bits (32K x 8)
non-volatile CMOS Static Ram, fabricated from
advanced silicon gate CMOS technology and a high
reliability lithium power cell.
The pin-out of the GR3281 conforms to the JEDEC
standards and is fully compatible with normal static
RAM.
The power down circuit is fully automatic and is
referenced at 4.5 volts. At this point the GR3281 is
write protected by an internal inhibit function for Data
Protection and the memory contents are retained by
OPERATING CONDITIONS
Symbol
Min
Vdd 4.75
Vin (1)
2.2
Vin (0)
Iin (any other pin) – 1.0
Vout (1)(Iout = –1mA) 2.4
Vout (0)(Iout = +2mA)
Idd (Active)
Idd (Deselected)
Tcycle
Cin (any pin)
Typ Max
5.0 5.5
0.8
+1.0
0.4
30
1.0
100
10
Unit
Volts
Volts
Volts
µA.
Volts
Volts
mA.
mA.
nS.
pF
the lithium power source.
Power down is very fast, this being essential for data
integrity, taking a maximum of 15 µS (15
microseconds) to power down from 5 volts to 0 volts.
This is much faster than system power failure
conditions. Therefore there are no special conditions
required when installing the GR3281.
The GR3281 can, without external power, retain data
almost indefinitely. The limiting factor will be the shelf
life of the lithium cell, which is typically ten years. It
is possible that this figure may be extended in view
of the extremely light duty imposed upon the cell.
APPLICATION
When powered down, the GR3281 is transportable
and data can be moved from system to system, this
makes it ideal for program development, data
collection in data loggers, program changes in
process control, automation and robotics and user
definable lookup tables, etc.
CE OE
HX
LH
LL
LX
OPERATING MODE
WR MODE OUTPUT
X Unsel. Hi-Z
H Unsel. Hi-Z
H
Read
Dout
L
Write
Din
ldd
Deselected
Active
Active
Active
PIN CONNECTIONS
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
D0
D1
D2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 Vdd
27 WR
26 A13
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE
19 D7
18 D6
17 D5
16 D4
15 D3
PIN DESIGNATIONS
Pin
A0-A12
D0-D7
OE
CE
WR
Vdd
GND
Function
Address I/P`s
Data in/out
Output Enable
Chip Enable
Write Enable
+5Volt Power
Ground
DISPOSAL INSTRUCTIONS
Do not dispose of non-volatile memory devices by
incineration or crushing. Devices may be returned
carriage paid to Greenwich Instruments Ltd., for
Vdd
VTH
DATA RETENTION OPERATING CONDITIONS
< tF >
< tR >
disposal.
3.2V
UK tPD> <
>
t
<
REC
Greenwich Instruments Ltd.,
0V
Meridian House, Park Road,
Swanley, Kent. BR8 8AH
< t DR
>
Tele: 08700 505 404
Symbol
Parameter
Min Typ Max Units
Fax: 08700 505 405
Vdd Operating supply voltage
VTH Data retention voltage
4.75 5.0 5.50 Volts
4.5 Volts
t F Vdd slew to 0V
15
µS
t R Vdd slew 0V to 5.0V
15
µS
Greenwich Instruments Ltd., are continually developing their
products and reserve the right to alter specifications without
prior notice. Standard Terms and Conditions of Sale apply.
t REC
t DR
t PD
CE to O/P valid from power up
Data retention time
CE at Vin(1) before power down 0
10
15 µS
Years
µS
GR3281 (32K x 8)
NON-VOLATILE RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Vdd
Vi/o
Temp
Min
– 0.3
– 0.3
– 20
Max
7.0
Vdd +0.3
+70
Units
Volts
Volts
deg. C
DESCRIPTION
The GR3281 is a 32768 word by 8 bits (32K x 8)
non-volatile CMOS Static Ram, fabricated from
advanced silicon gate CMOS technology and a high
reliability lithium power cell.
The pin-out of the GR3281 conforms to the JEDEC
standards and is fully compatible with normal static
RAM.
The power down circuit is fully automatic and is
referenced at 4.5 volts. At this point the GR3281 is
write protected by an internal inhibit function for Data
Protection and the memory contents are retained by
OPERATING CONDITIONS
Symbol
Vdd
Min Typ Max
4.75 5.0
5.5
Vin (1)
2.2
Vin (0)
Iin (any other pin) – 1.0
Vout (1)(Iout = –1mA) 2.4
Vout (0)(Iout = +2mA)
Idd (Active)
Idd (Deselected)
Tcycle
0.8
+1.0
0.4
30
1.0
100
Cin (any pin)
10
Unit
Volts
Volts
Volts
µA.
Volts
Volts
mA.
mA.
nS.
pF
the lithium power source.
Power down is very fast, this being essential for data
integrity, taking a maximum of 15 µS (15
microseconds) to power down from 5 volts to 0 volts.
This is much faster than system power failure
conditions. Therefore there are no special conditions
required when installing the GR3281.
The GR3281 can, without external power, retain data
almost indefinitely. The limiting factor will be the shelf
life of the lithium cell, which is typically ten years. It
is possible that this figure may be extended in view
of the extremely light duty imposed upon the cell.
APPLICATION
When powered down, the GR3281 is transportable
and data can be moved from system to system, this
makes it ideal for program development, data
collection in data loggers, program changes in
process control, automation and robotics and user
definable lookup tables, etc.
CE OE
HX
LH
LL
LX
OPERATING MODE
WR MODE OUTPUT
X Unsel. Hi-Z
H Unsel. Hi-Z
H
Read
Dout
L
Write
Din
ldd
Deselected
Active
Active
Active
PIN CONNECTIONS
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
D0
D1
D2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 Vdd
27 WR
26 A13
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE
19 D7
18 D6
17 D5
16 D4
15 D3
PIN DESIGNATIONS
Pin
A0-A12
D0-D7
OE
CE
WR
Vdd
GND
Function
Address I/P`s
Data in/out
Output Enable
Chip Enable
Write Enable
+5Volt Power
Ground
DISPOSAL INSTRUCTIONS
Do not dispose of non-volatile memory devices by
incineration or crushing. Devices may be returned
carriage paid to Greenwich Instruments Ltd., for
Vdd
VTH
DATA RETENTION OPERATING CONDITIONS
< tF >
< tR >
disposal.
3.2V
UK tPD> <
>
t
<
REC
Greenwich Instruments Ltd.,
Meridian House, Park Road,
Swanley, Kent. BR8 8AH
Tele: 08700 505 404
Fax: 08700 505 405
Greenwich Instruments Ltd., are continually developing their
products and reserve the right to alter specifications without
prior notice. Standard Terms and Conditions of Sale apply.
0V
< t DR
Symbol
Parameter
Min
Vdd Operating supply voltage
4.75
VTH
tF
tR
t REC
t DR
t PD
Data retention voltage
Vdd slew to 0V
15
Vdd slew 0V to 5.0V
15
CE to O/P valid from power up
Data retention time
CE at Vin(1) before power down 0
>
Typ
5.0
4.5
10
Max Units
5.50 Volts
Volts
µS
µS
15 µS
Years
µS

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共有リンク

Link :


部品番号部品説明メーカ
GR3281

NON-VOLATILE RAM

Greenwich
Greenwich
GR3281H

NON-VOLATILE RAM

Greenwich
Greenwich


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