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IXFK94N50P2 の電気的特性と機能

IXFK94N50P2のメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFK94N50P2
部品説明 Power MOSFET ( Transistor )
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFK94N50P2 Datasheet, IXFK94N50P2 PDF,ピン配置, 機能
Polar2TM HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK94N50P2
IXFX94N50P2
VDSS =
ID25 =
RDS(on)
500V
94A
55mΩ
TO-264 (IXFK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dV/dt
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
500
500
V
V
± 30 V
± 40 V
94 A
240 A
94 A
3.5 J
1300
W
30 V/ns
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
20..120 /4.5..27
°C
°C
Nm/lb.in.
N/lb.
10 g
6g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.0 V
± 200 nA
10 μA
2 mA
55 mΩ
G
D
S
PLUS247 (IXFX)
Tab
G
DS
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Fast Intrinsic Diode
z Dynamic dv/dt Rating
z Avalanche Rated
z Low RDS(ON) and QG
z Low Package Inductance
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Battery Chargers
z Uninterrupted Power Supplies
z AC and DC Motor Drives
z High Speed Power Switching
Application
© 2011 IXYS CORPORATION, All Rights Reserved
DS100215B(9/11)

1 Page





IXFK94N50P2 pdf, ピン配列
IXFK94N50P2
IXFX94N50P2
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
7V
6V
5V
12345
VDS - Volts
6
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 3. Output Characteristics @ TJ = 125ºC
VGS = 10V
7V
6V
5V
4V
2 4 6 8 10 12
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 47A Value vs.
Drain Current
3.2
VGS = 10V
2.8
TJ = 125ºC
2.4
14
2.0
1.6
TJ = 25ºC
1.2
0.8
0
20 40
60 80 100 120 140 160 180 200
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
200
VGS = 10V
180 8V
160
7V
140
120
100
80 6V
60
40
20 5V
0
0 5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 47A Value vs.
Junction Temperature
3.2
VGS = 10V
2.8
2.4
I D = 94A
2.0
I D = 47A
1.6
1.2
0.8
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
100
90
80
70
60
50
40
30
20
10
0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
-25 0 25 50 75 100 125
TC - Degrees Centigrade
150
© 2011 IXYS CORPORATION, All Rights Reserved


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部品番号部品説明メーカ
IXFK94N50P2

Power MOSFET ( Transistor )

IXYS Corporation
IXYS Corporation


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