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IRFS9N60A の電気的特性と機能

IRFS9N60AのメーカーはVishayです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFS9N60A
部品説明 Power MOSFET ( Transistor )
メーカ Vishay
ロゴ Vishay ロゴ 




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IRFS9N60A Datasheet, IRFS9N60A PDF,ピン配置, 機能
IRFS9N60A, SiHFS9N60A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
600
VGS = 10 V
49
Qgs (nC)
13
Qgd (nC)
20
Configuration
Single
0.75
D2PAK (TO-263)
D
G
GD
S
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
S
N-Channel MOSFET
D2PAK (TO-263)
SiHFS9N60A-GE3
IRFS9N60APbF
SiHFS9N60A-E3
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Qg results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
APPLICABLE OFF LINE SMPS TOPOLOGIES
• Active Clamped Forward
• Main Switch
D2PAK (TO-263)
SiHFS9N60ATRR-GE3a
IRFS9N60ATRRPbFa
SiHFS9N60ATR-E3a
D2PAK (TO-263)
SiHFS9N60ATRL-GE3a
IRFS9N60ATRLPbFa
SiHFS9N60ATL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 6.8 mH, Rg = 25 , IAS = 9.2 A (see fig. 12).
c. ISD 9.2 A, dI/dt 50 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
600
± 30
9.2
5.8
37
1.3
290
9.2
17
170
5.0
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91287
S11-1054-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





IRFS9N60A pdf, ピン配列
IRFS9N60A, SiHFS9N60A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
100
TJ = 150° C
10
1
4.7V
0.1
0.1
20µs PULSE WIDTH
TJ= 25 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
TJ = 25 °C
1
0.1
4.0
V DS= 50V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
10
4.7V
20µs PULSE WIDTH
TJ= 150 °C
1
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0 ID = 9.2A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91287
S11-1054-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


IRFS9N60A 電子部品, 半導体
IRFS9N60A, SiHFS9N60A
Vishay Siliconix
600
ID
TOP
4.1A
500 5.8A
BOTTOM 9.2A
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91287
S11-1054-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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共有リンク

Link :


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