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PDF IRG4PH50SPbF Data sheet ( Hoja de datos )
| Número de pieza | IRG4PH50SPbF | |
| Descripción | Standard Speed IGBT | |
| Fabricantes | IRF | |
| Logotipo |  |
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PD -95525A
IRG4PH50SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Lead-Free
C
G
E
n-channel
Standard Speed IGBT
VCES =1200V
VCE(on) typ. = 1.47V
@VGE = 15V, IC = 33A
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC =25°
PD @ TC =100°
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
cPulsed Collector Current
dClamped Inductive Load Current
Gate-to-Emitter Voltage
eTransient Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
1200
57
33
114
114
± 20
± 30
270
200
80
-55 to + 150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
mJ
W
°C
Min.
—
—
—
—
Typ.
—
0.24
—
6.0(0.21)
Max.
0.64
—
40
—
Units
°C/W
g (oz)
1
07/08/08
1 page  
7000
6000
Cies
5000
VCCCGiroeeesEss
=
=
=
=
0V,
CCCggceec
+
+
f = 1MHz
Cgc , Cce
Cgc
SHORTED
4000
3000
Coes
2000 Cres
1000
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4PH50SPbF
20 VCC = 400V
I C = 33A
15
10
5
0
0 25 50 75 100 125 150 175
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
25.0 VCC = 960V
VGE
TJ
=
=
15V
25 °C
IC = 33A
24.0
23.0
22.0
1000 RG = 15O5ΩhΩm
VGE = 15V
VCC = 960V
100
10
IC = 66A
IC = 33A
IC = 16.5A
21.0
0
10 20 30 40
RRGG, G, aGteatReeRsiesstaisntcaen(ceΩ(O) hm)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG4PH50SPbF.PDF ] | |
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