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PDF SVF3N80D Data sheet ( Hoja de datos )

Número de pieza SVF3N80D
Descripción 800V N-CHANNEL MOSFET
Fabricantes Silan Microelectronics　
Logotipo Silan Microelectronics Logotipo



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SVF3N80M/F/D_Datasheet
3A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF3N80M/F/D is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 3A, 800V, RDS(on)(typ.)=3.8Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF3N80M
SVF3N80F
SVF3N80D
SVF3N80DTR
Package Type
TO-251-3L
TO-220F-3L
TO-252-2L
TO-252-2L
Marking
SVF3N80M
SVF3N80F
SVF3N80D
SVF3N80D
Material
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.03.15
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SVF3N80D pdf
SVF3N80M/F/D_Datasheet
TYPICAL CHARACTERISTICS(continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.03.15
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