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STP10N60M2のメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。 |
部品番号 | STP10N60M2 |
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部品説明 | N-CHANNEL POWER MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTP10N60M2ダウンロード(pdfファイル)リンクがあります。 Total 24 pages
STB10N60M2, STD10N60M2,
STP10N60M2, STU10N60M2
N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg
Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages
Datasheet − production data
TAB
3
1
D2 PAK
TAB
3
2
1
TO-220
TAB
3
1
DPAK
TAB
IPAK
3
2
1
Figure 1. Internal schematic diagram
, TAB
Features
Order codes VDS @ TJmax
RDS(on)
max
ID
STB10N60M2
STD10N60M2
STP10N60M2
STU10N60M2
650 V
0.600 Ω 7.5 A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
AM15572v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STB10N60M2
STD10N60M2
STP10N60M2
STU10N60M2
Table 1. Device summary
Marking
Package
2
D PAK
10N60M2
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
December 2013
This is information on a product in full production.
DocID024710 Rev 2
1/24
www.st.com
24
1 Page STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VGS
ID
ID
(1)
IDM
PTOT
(1)
dv/dt
(2)
dv/dt
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Tstg Storage temperature
Tj Max. operating junction temperature
1. ISD ≤ 7.5 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V
2. VDS ≤ 480 V
± 25
7.5
4.9
30
85
15
50
- 55 to 150
Unit
V
A
A
A
W
V/ns
°C
Symbol
Table 3. Thermal data
Parameter
Value
D2PAK DPAK TO-220
IPAK
Unit
Rthj-case Thermal resistance junction-case max
(1)
Rthj-pcb Thermal resistance junction-pcb max
Rthj-amb Thermal resistance junction-ambient max
1. When mounted on 1 inch² FR-4, 2 Oz copper board
30
1.47
50
62.5
°C/W
°C/W
100 °C/W
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Avalanche current, repetitive or not repetitive
IAR (pulse width limited by Tjmax )
Single pulse avalanche energy (starting
EAS Tj=25°C, ID= IAR; VDD=50)
2.5
110
Unit
A
mJ
DocID024710 Rev 2
3/24
3Pages Electrical characteristics
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for DPAK and
IPAK
ID AM15833v1
(A)
Figure 3. Thermal impedance for DPAK and
IPAK
10
1
OpeLriamtiiotendinbythmisaaxreRaDSis(on)
0.1
0.01
0.1
1
Tj=150°C
Tc=25°C
Single
pulse
10 100
10µs
100µs
1ms
10ms
VDS(V)
Figure 4. Safe operating area for D2PAK and
TO-220
ID AM15834v1
(A)
Figure 5. Thermal impedance for D2PAK and
TO-220
10
1
OpeLriamtiiotendinbythmisaaxreRaDSis(on)
0.1
0.01
0.1
1
Tj=150°C
Tc=25°C
Single
pulse
10 100
10µs
100µs
1ms
10ms
VDS(V)
Figure 6. Output characteristics
ID AM15823v1
(A) VGS=7, 8, 9, 10V
14
6V
12
10
8
6
5V
4
2
4V
0
0 5 10 15 20 VDS(V)
Figure 7. Transfer characteristics
ID (A)
14
VDS=18V
AM15824v1
12
10
8
6
4
2
0
0 2 4 6 8 10 VGS(V)
6/24 DocID024710 Rev 2
6 Page | |||
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部品番号 | 部品説明 | メーカ |
STP10N60M2 | N-CHANNEL POWER MOSFET | STMicroelectronics |