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C2880のメーカーはToshibaです、この部品の機能は「NPN Transistor - 2SC2880」です。 |
部品番号 | C2880 |
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部品説明 | NPN Transistor - 2SC2880 | ||
メーカ | Toshiba | ||
ロゴ | |||
このページの下部にプレビューとC2880ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC2880
2SC2880
High Voltage Switching Applications
Unit: mm
• High voltage: VCEO = 150 V
• High transition frequency: fT = 120 MHz
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
• Complementary to 2SA1200
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
PC
(Note 1)
Tj
Tstg
200
150
5
50
10
500
800
150
−55 to 150
V
V
V
mA
mA
mW
°C
°C
PW-Mini
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2009-12-21
1 Page IC – VCE
50
2 mA 1 mA
500 μA
40 300 μA
30
200 μA
20
IB = 100 μA
10
Common emitter
Ta = 25°C
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
hFE – IC
500
Common emitter
300 VCE = 5 V
Ta = 100°C
25
100
−25
50
30
10
0.5 1 3 10 30
Collector current IC (mA)
100
2SC2880
hFE – IC
500
Common emitter
300 Ta = 25°C
10
100
50
VCE = 2 V
5
30
10
0.5 1 3 10 30
Collector current IC (mA)
100
VCE (sat) – IC
3
Common emitter
Ta = 25°C
1
IC/IB = 20
0.5 10
0.3 5
0.1
0.05
0.5 1 3 10 30
Collector current IC (mA)
100
VCE (sat) – IC
3
Common emitter
IC/IB = 10
1
0.5
Ta = 100°C
0.3 25
−25
0.1
0.05
0.5 1 3 10 30
Collector current IC (mA)
100
50
Common emitter
VCE = 5 V
40
IC – VBE
Ta = 100°C 25
−25
30
20
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
3 2009-12-21
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ C2880 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
C2880 | NPN Transistor - 2SC2880 | Toshiba |
C2881 | NPN Transistor - 2SC2881 | Toshiba |
C2884 | NPN Transistor - 2SC2884 | Toshiba |