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PDF 2SC2839 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2839 | |
| Descripción | NPN Transistor | |
| Fabricantes | GD electronics | |
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1. EMITTER
2SC2839
TO-92S Transistor (NPN)
TO-92S
2. COLLECTOR
Features
123
3. BASE
High fT and small Cre(fT=320MHZ typ, Cre=0.95pF typ).
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
30 V
VCEO
Collector-Emitter Voltage
20 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current –Continuous 30
mA
PC Collector Power Dissipation
400 mW
TJ Junction Temperature
125 ℃
Tstg Storage Temperature
-55-125
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=100μA, IE=0
30
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=100μA, IC=0
20
5
Collector cut-off current
ICBO
VCB=10V, IE=0
Emitter cut-off current
IEBO
VEB=4V, IC=0
DC current gain
hFE VCE=6V, IC=1mA
60
Transition frequency
fT VCE=6V, IC=1mA
200
Reverse Transfer Capacitance
Cre VCB=6V, f=1MHz
0.7
TYP
320
0.95
MAX UNIT
V
V
V
0.1 μA
0.1 μA
320
MHz
1.3 pF
Base-to-Collector Time Constant
rbb’cC VCE=6V, Ic=1mA,,f=31.9MHZ
12 20 ps
Noise figure
NF VCE=6V, Ic=1mA,,f=100MHZ
3.0 dB
Power Gain
PG VCE=6V, Ic=1mA,,f=100MHZ
25 dB
CLASSIFICATION OF hFE
Rank
Range
D
60-120
E
100-200
F
160-320
1 page  
2SC2839
TO-92S Transistor (NPN)
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2SC2839.PDF ] | |
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