BD45E411 Datasheet PDF - ROHM Semiconductor
| Part Number | BD45E411 | |
| Description | Counter Timer Built-in CMOS Voltage Detector IC | |
| Manufacturers | ROHM Semiconductor | |
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There is a preview and BD45E411 download ( pdf file ) link at the bottom of this page. Total 17 Pages | ||
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Datasheet
Voltage Detector IC Series for Automotive
Counter Timer Built-in
CMOS Voltage Detector IC
BD45Exxxx-M series BD46Exxxx-M series
●General Description
ROHM’s BD45Exxxx-M and BD46Exxxx-M series are
highly accurate, low current consumption Voltage
Detector IC series. Because the counter timer delay
circuit is built into those series, an external capacitor for
the delay time setting is unnecessary. The lineup was
established with two output types (Nch open drain and
CMOS output) and detection voltages range from 2.3V
to 4.8V in increments of 0.1V, so that the series may be
selected according to application.
●Features
Counter Timer Built-in
No delay time setting capacitor required
Ultra-low current consumption
Two output types (Nch open drain and CMOS output)
Package SSOP5 is similar to SOT-23-5 (JEDEC)
AEC-Q100 Qualified
●Key Specifications
Detection voltage:
2.3V to 4.8V (Typ.)
High accuracy detection voltage:
Ultra-low current consumption:
Operating temperature range:
Three internal, fixed delay time:
0.1V steps
±1.0%
0.85µA (Typ.)
-40°C to +105°C
50ms
100ms
200ms
●Package
SSOP5
2.90mm x 2.80mm x 1.25mm
●Applications
Circuits using microcontrollers or logic circuits that
require a reset for automotive applications (car
navigation, car audio, meter panel, exterior lamp etc.)
●Typical Application Circuit
VDD1
VDD2
BD45Exxxx-M
RL
Micro
RST controller
CL
（Noise-filtering
Capacitor）
（Open Drain Output Type）
BD45Exxxx-M series
●Connection Diagram
SSOP5
VDD
VOUT
GND
TOP VIEW
Marking
Lot. No
ER SUB GND
VDD1
BD46Exxxx-M
RST
Micro
controller
GND
CL
（Noise-filtering
Capacitor）
（CMOS Output Type）
BD46Exxxx-M series
●Pin Descriptions
PIN No. Symbol
Function
1 ER Manual Reset
2
SUB
Substrate *
3
GND
GND
4
VOUT
Reset Output
5 VDD Power Supply Voltage
*Connect the substrate to GND.
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product is not designed for protection against radioactive rays
1/14
TSZ02201-0R7R0G300110-1-2
27.Aug.2013 Rev.004
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BD45Exxxx-M series BD46Exxxx-M series
●Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C) – continued
Parameter
Operating Voltage Range
‘High’ Output Voltage (Pch)
‘Low’Output Voltage (Nch)
Leak Current when OFF
ER Pin ‘H’ Voltage
ER Pin ‘L’ Voltage
ER Pin Input Current
Symbol
VOPL
VOH
VOL
Ileak
VEH
VEL
IEL
Condition
VOL≤0.4V, RL=470kΩ, Ta=25 to 105°C
Min.
0.95
VOL≤0.4V, RL=470kΩ, Ta=-40 to 25°C
1.20
VDD=4.8V, ISOURCE= 1.0 mA, VDET(2.3V to 4.2V) VDD-0.5
VDD=6.0V, ISOURCE= 1.2 mA, VDET(4.3V to 4.8V) VDD-0.5
VDD=1.2V, ISINK = 0.45 mA
-
VDD=2.4V, ISINK = 1.3 mA, VDET(2.7V to 4.8V)
-
VDD=VDS=10V
*1 -
*1 2.0
*1 -
-
Limit
Typ.
-
-
-
-
-
-
-
-
-
1
VDET(T):Standard Detection Voltage (2.3V to 4.8V, 0.1V step)
RL :Pull-up resistor to be connected between VOUT and power supply.
CL :Capacitor to be connected between VOUT and GND.
*1 Guarantee is Ta=25°C.
Attention: Please connect ‘ER’ to the GND when not in use.
Max.
-
-
-
-
0.3
0.3
0.1
-
0.8
10
Unit
V
V
V
µA
V
V
µA
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/14
TSZ02201-0R7R0G300110-1-2
27.Aug.2013 Rev.004
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BD45E411 electronic component. |
| Information | Total 17 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BD45E411.PDF Datasheet ] | |
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