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BD35390FJ の電気的特性と機能

BD35390FJのメーカーはROHM Semiconductorです、この部品の機能は「Termination Regulator」です。


製品の詳細 ( Datasheet PDF )

部品番号 BD35390FJ
部品説明 Termination Regulator
メーカ ROHM Semiconductor
ロゴ ROHM Semiconductor ロゴ 




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BD35390FJ Datasheet, BD35390FJ PDF,ピン配置, 機能
Datasheet
1.0V to 5.5V, 1A 1ch
Termination Regulator for DDR-SDRAMs
BD35390FJ
General Description
BD35390FJ is a termination regulator that complies with
JEDEC requirements for DDR1/2/3-SDRAM. This linear
power supply uses a built-in N-channel MOSFET and
high-speed OP-AMPS specially designed to provide
excellent transient response. It has a sink/source
current capability up to 1A and has a power supply bias
requirement of 3.3V to 5.0V for driving the N-channel
MOSFET. By employing an independent reference
voltage input (VDDQ) and a feedback pin (VTTS), this
termination regulator provides excellent output voltage
accuracy and load regulation as required by JEDEC
standards.
Key Specifications
Termination Input Voltage Range:
1.0V to 5.5V
VCC Input Voltage Range:
2.7V to 5.5V
VDDQ Reference Voltage Range: 1.0V to 2.75V
Output Current:
1.0A (Max)
Output Current (Pulse):
3.0A (Max)
High side FET ON-Resistance:
0.35(Typ)
Low side FET ON-Resistance:
0.35(Typ)
Standby Current:
0.5mA (Typ)
Operating Temperature Range: -30°C to +100°C
Package
W(Typ) x D(Typ) x H(Max)
Features
Incorporates a Push-Pull Power Supply for
Termination (VTT)
Incorporates an Enabler
Incorporates an Under Voltage Lockout (UVLO)
Incorporates a Thermal Shutdown Protector (TSD)
Compatible with Dual Channel (DDR1, DDR2,
DDR3)
Incorporates PGOOD Function
SOP-J8
4.90mm x 6.00mm x 1.65mm
Applications
Power Supply for DDR 1/2/3/4 - SDRAM
Power Supply for GDDR 1/2/3/4/5 - SDRAM
Power Supply for LPDDR 1/2/3/4 - SDRAM
Typical Application Circuit, Block Diagram
VCC
C3
VDDQ
VCC
6
VDDQ
5
Reference
Block
VCC
UVLO
SOFT
TSD
EN
UVLO
Enable EN
4
Thermal TSD
Protection
EN
VTT_IN
C5
VTT_IN
7
VCC
TSD
EN
VCC UVLO
TSD
EN
UVLO
Delay
Logic
VTT
8
C7
3
VTTS
1
PGOOD
VTT
R1
2
GND
Product structureSilicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product has no designed protection against radioactive rays
1/16
TSZ02201-0J1J0A900720-1-2
07.Mar.2014 Rev.001

1 Page





BD35390FJ pdf, ピン配列
BD35390FJ
Datasheet
Absolute Maximum Ratings
Parameter
Input Voltage
Enable Input Voltage
Termination Input Voltage
VDDQ Reference Voltage
Output Current
Output Current (When Pulse is
Active (Note 3))
Power Dissipation1
Power Dissipation2
Symbol
VCC
VEN
VTT_IN
VDDQ
ITT1
ITT2
Pd1
Pd2
Rating
7 (Note 1) (Note 2)
7 (Note 1) (Note 2)
7 (Note 1) (Note 2)
7 (Note 1) (Note 2)
1 (Note 1)
3 (Note 1)
0.56 (Note 4)
0.67 (Note 5)
Unit
V
V
V
V
A
A
W
W
Operating Temperature Range
Topr
-30 to +100
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Maximum Junction Temperature Tjmax
+150
°C
(Note 1) Should not exceed Pd.
(Note 2) Instantaneous surge voltage, back electromotive force and voltage under less than 10% duty cycle.
(Note 3) Voltage under less than 10u sec.
(Note 4) Reduce by 4.50mW/°C for Ta over 25°C (when not mounted on a heat radiation board)
(Note 5) Reduce by 5.40mW/°C for Ta over 25°C (when mounted on a 70mmx70mmx1.6mm glass epoxy board)
Caution: Operating the IC over the absolute maximum ratings may damage the IC. In addition, it is impossible to predict all destructive situations such as
short-circuit modes, open circuit modes, etc. Therefore, it is important to consider circuit protection measures, like adding a fuse, in case the IC is operated in
a special mode exceeding the absolute maximum ratings
Recommended Operating Conditions (Ta=25°C)
Parameter
Input Voltage
Termination Input Voltage
VDDQ Reference Voltage
Enable Input Voltage
Symbol
VCC
VTT_IN
VDDQ
VEN
Min
2.7
1.0
1.0
-0.3
Rating
Max
5.5
5.5
2.75
+5.5
Unit
V
V
V
V
www.rohm.co.jp
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
3/16
TSZ02201-0J1J0A900720-1-2
07.Mar.2014 Rev.001


3Pages


BD35390FJ 電子部品, 半導体
BD35390FJ
Typical Waveforms
VTT(20mV/div)
source
ITT(1A/div)
sink
(10µsec/div.)
Figure 4. DDR3 (+1A to -1A)
Datasheet
VTT(20mV/div)
source
ITT(1A/div)
sink
(10µsec/div.)
Figure 5. DDR2 (+1A to -1A)
VTT(20mV/div)
source
ITT(1A/div)
sink
(10µsec/div.)
Figure 6. DDR1 (+1A to -1A)
VTT(20mV/div)
source
ITT(1A/div)
sink
(10µsec/div.)
Figure 7. DDR3 (-1A to +1A)
www.rohm.co.jp
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
6/16
TSZ02201-0J1J0A900720-1-2
07.Mar.2014 Rev.001

6 Page



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部品番号部品説明メーカ
BD35390FJ

Termination Regulator

ROHM Semiconductor
ROHM Semiconductor


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