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PDF C5307 Data sheet ( Hoja de datos )
| Número de pieza | C5307 | |
| Descripción | NPN Transistor - 2SC5307 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5307
High Voltage Switching Applications
2SC5307
Unit: mm
• High breakdown voltage: VCEO = 400 V
• Low saturation voltage: VCE (sat) = 0.4 V (typ.)
(IC = 20 mA, IB = 0.5 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Ta = 25°C
(Note)
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
400
400
7
50
100
25
500
1000
150
−55 to 150
Note: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Symbol
ICBO
IEBO
VCEO
hFE (1)
hFE (2)
VCE (sat)
VBE
Cob
Test Condition
VCB = 400 V, IE = 0
VEB = 7 V, IC = 0
IC = 1 mA, IB = 0
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 20 mA
IC = 20 mA, IB = 0.5 mA
VCE = 5 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1 MHz
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Min Typ. Max Unit
― ― 1 µA
― ― 1 µA
400 ―
―
V
80 ― ―
100 ― 300
― 0.4 1.0
V
― 0.7 0.85 V
― 4.0 ― pF
Marking
Part No. (or abbreviation code)
AL
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-07
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C5307.PDF ] | |
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