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PDF IXTA102N15T Data sheet ( Hoja de datos )
| Número de pieza | IXTA102N15T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA102N15T
IXTH102N15T
IXTP102N15T
IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
TO-220 (IXTP)
VDSS =
ID25 =
RDS(on) ≤
150V
102A
18mΩ
TO-3P (IXTQ)
GS
(TAB)
GD S
(TAB)
G DS
(TAB)
G
D
S
(TAB)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C RGS = 1MΩ
Continuous
Transient
Maximum Ratings
150
150
± 20
± 30
V
V
V
V
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 175°C
TC = 25°C
102
75
300
51
750
10
455
-55 ... +175
175
-55 ... +175
A
A
A
A
mJ
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
300 °C
260 °C
Mounting Torque (TO-220, TO-3P, TO-247) 1.13 / 10
Mounting Force (TO-263)
10..65/2.2..14.6
Nmlb.in.
N/lb.
TO-263
TO-220
TO-3P
TO-247
2.5 g
3.0 g
5.5 g
6.0 g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ.
Max.
150 V
3.0 5.0 V
± 200 nA
5 μA
250 μA
18 mΩ
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Avalanche rated
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor drives
z Uninterruptible power supplies
z High speed power switching
applications
© 2008 IXYS CORPORATION, All rights reserved
DS99661B(10/08)
1 page  
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Fig. 7. Input Admittance
160
140
120
100
80
60
TJ = 150ºC
25ºC
- 40ºC
40
20
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGS - Volts
300
275
250
225
200
175
150
125
100
75
50
25
0
0.4
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
TJ = 150ºC
TJ = 25ºC
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD - Volts
1.3
120
110
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 8. Transconductance
TJ = - 40ºC
25ºC
150ºC
20 40 60 80 100 120 140 160
ID - Amperes
Fig. 10. Gate Charge
10
9 VDS = 75V
I D = 51A
8 I G = 10mA
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90
QG - NanoCoulombs
10,000
1,000
Fig. 11. Capacitance
Ciss
Coss
100
Crss
f = 1 MHz
10
0
5 10 15 20 25 30 35 40
VDS - Volts
1000.0
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit
100.0
25µs
100µs
10.0
1ms
1.0
0.1
1
TJ = 175ºC
TC = 25ºC
Single Pulse
10ms
100ms
DC
10 100
VDS - Volts
1000
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: F_102N15T(6E)90-30-08
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IXTA102N15T.PDF ] | |
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