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PDF 2SC4003 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4003 | |
| Descripción | NPN Transistor | |
| Fabricantes | LGE | |
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2SC4003(NPN)
TO-251/TO-252-2L Transistor
TO-251
1. BASE
2. COLLECTOR
1 23
3. EMITTER
Features
High hFE
hFE=60 to 200
low VCE(sat) VCE(sat)=0.6V
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
TO-252-2L
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
400
400
5
0.2
1
150
-55-150
V
V
V
A
W
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=10µA,IE=0
400 V
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
400 V
Emitter-base breakdown voltage
V(BR)EBO IE=10µA,IC=0
5V
Collector cut-off current
ICBO
VCB=300V,IE=0
0.1 µA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.1 µA
DC current gain
hFE VCE=10V,IC=50mA
60 200
Collector-emitter saturation voltage
VCE(sat) IC=50mA,IB=5mA
0.6 V
Base-emitter saturation voltage
VBE(sat) IC=50mA,IB=5mA
1V
Transition frequency
CLASSIFICATION OF hFE
Rank
Range
fT VCE=30V,IC=10mA
D
60-120
70
E
100-200
MHz
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC4003.PDF ] | |
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