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C3307 の電気的特性と機能

C3307のメーカーはToshibaです、この部品の機能は「NPN Transistor - 2SC3307」です。


製品の詳細 ( Datasheet PDF )

部品番号 C3307
部品説明 NPN Transistor - 2SC3307
メーカ Toshiba
ロゴ Toshiba ロゴ 




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C3307 Datasheet, C3307 PDF,ピン配置, 機能
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3307
2SC3307
High-Speed and High-Voltage Switching Applications
Switching Regulator Applications
High-Speed DC-DC Converter Applications
Industrial Applications
Unit: mm
Excellent switching times: tr = 1.0 μs (max), tf = 1.0 μs (max)
(IC = 5 A)
High collector breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
900
800
7
10
15
3
150
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
http://store.iiic.cc/
2009-07-17

1 Page





C3307 pdf, ピン配列
IC – VCE
12
Common emitter
2 1.6
10 1.4
Tc = 25°C
1.2
1.0
8 0.8
0.6
6
0.4
4 0.2
IB = 0.1 A
2
0
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE (sat) – IC
3
Common emitter
IC/IB = 5
1
0.5
0.3
Tc = 100°C
0.1
0.05
25 55
0.02
0.003 0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
10
2SC3307
hFE – IC
500
300 Common emitter
VCE = 5 V
100
50 Tc = 100°C
30
25
10 55
5
3
1
0.003 0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
10
VBE (sat) – IC
10
Common emitter
5 IC/IB = 5
3
1 Tc = 55°C
0.5
0.3 100 25
0.1
0.05
0.03
0.003 0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
10
10
Common emitter
VCE = 5 V
8
IC – VBE
6
Ta = 100°C
4
25
2 55
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
30
10
5
3
1
0.5
0.3
0.1
0
Switching Characteristics
IC = 10IB1
3IB1 = IB2
Pulse width = 20 μs
Duty cycle 1%
Tc = 100°C
25
100
tstg
tr
tf
25
2468
Collector current IC (A)
10
3
http://store.iiic.cc/
2009-07-17


3Pages





ページ 合計 : 5 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
C3300

NPN Transistor - 2SC3300

SavantIC
SavantIC
C3302

NPN Transistor - 2SC3302

Toshiba Semiconductor
Toshiba Semiconductor
C3303

NPN Transistor - 2SC3303

Toshiba
Toshiba
C3306

NPN Transistor - 2SC3306

Toshiba Semiconductor
Toshiba Semiconductor


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