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PDF IXTQ75N15 Data sheet ( Hoja de datos )
| Número de pieza | IXTQ75N15 | |
| Descripción | High Current Power MOSFET | |
| Fabricantes | IXYS | |
| Logotipo |  |
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High Current
Power MOSFET
N-Channel Enhancement Mode
Preliminary Data Sheet
IXTH 75N15
IXTQ 75N15
IXTT 75N15
VDSS
ID25
RDS(on)
= 150 V
= 75 A
= 23 mΩ
TO-247 AD (IXTH)
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD, TO-3P
TO-268
Maximum Ratings
150 V
150 V
±20 V
±30 V
75 A
300 A
75 A
60 mJ
1.5 J
5 V/ns
330
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250µA
IGSS VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Characteristic Values
Min. Typ.
Max.
150 V
2.0 4.0 V
±100 nA
25 µA
250 µA
23 mΩ
© 2003 IXYS All rights reserved
TO-3P (IXTQ)
(TAB)
G
DS
TO-268 (IXTT)
(TAB)
G
S
(TAB)
G = Gate
S = Source
Features
D = Drain
TAB = Drain
z International standard packages
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
DS98948B(08/03)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTQ75N15.PDF ] | |
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