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IXTH75N15 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTH75N15
部品説明 High Current Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTH75N15 Datasheet, IXTH75N15 PDF,ピン配置, 機能
High Current
Power MOSFET
N-Channel Enhancement Mode
IXTH 75N15
IXTT 75N15
VDSS
ID25
RDS(on)
= 150 V
= 75 A
= 23 m
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Maximum Ratings
150 V
150 V
±20 V
±30 V
75 A
300 A
75 A
60 mJ
1.5 J
5 V/ns
330
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
TO-247 AD (IXTH)
TO-268 (IXTT)
(TAB)
G
G = Gate
S = Source
S
D = Drain
TAB = Drain
(TAB)
Features
z International standard packages
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250µA
IGSS VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
Characteristic Values
Min. Typ.
Max.
150 V
2.0 4.0 V
±100 nA
25 µA
250 µA
23 m
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS98948C(05/04)

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