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HFH7N80 の電気的特性と機能

HFH7N80のメーカーはSemiHowです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HFH7N80
部品説明 N-Channel MOSFET
メーカ SemiHow
ロゴ SemiHow ロゴ 




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HFH7N80 Datasheet, HFH7N80 PDF,ピン配置, 機能
Mar 2010
HFH7N80
800V N-Channel MOSFET
BVDSS = 800 V
RDS(on) typ = 1.55 ȍ
ID = 7.0 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 35 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 1.55 ȍ (Typ.) @VGS=10V
‰ 100% Avalanche Tested
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800
7.0
4.4
28
ρ30
580
7.0
19.8
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25ఁ͚
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Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
198
1.59
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.63
--
40
Units
ఁ͠Έ
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HFH7N80 pdf, ピン配列
Typical Characteristics
Top :
101
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-2
10-1
Notes :
1. 250ȝ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
4.0
3.5
3.0 VGS = 10V
2.5 VGS = 20V
2.0
1.5
Note : TJ = 25
1.0
0 3 6 9 12 15 18
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2500
2000
1500
1000
500
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1. VDS = 50V
2. 250ȝ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1. VGS = 0V
2. 250ȝ s Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 160V
10 VDS = 400V
VDS = 640V
8
6
4
2
Note : ID = 7.0A
0
0 5 10 15 20 25 30 35 40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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3Pages


HFH7N80 電子部品, 半導体
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
50Kȍ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
Vin 10%
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
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6 Page



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部品番号部品説明メーカ
HFH7N80

N-Channel MOSFET

SemiHow
SemiHow


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