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HFU2N70SのメーカーはSemiHowです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | HFU2N70S |
| |
部品説明 | N-Channel MOSFET | ||
メーカ | SemiHow | ||
ロゴ | |||
このページの下部にプレビューとHFU2N70Sダウンロード(pdfファイル)リンクがあります。 Total 8 pages
Dec 2009
HFD2N70S / HFU2N70S
700V N-Channel MOSFET
BVDSS = 700 V
RDS(on) typ = 5.0 ȍ
ID = 1.5 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 6.2 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 5.0 ȍ (Typ.) @VGS=10V
100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD2N70S
1
2
3
HFU2N70S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ഒ)
– Continuous (TC = 100ഒ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
700
1.5
0.9
6.0
ρ30
62
1.5
3.8
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25ఁ) *
Power Dissipation (TC = 25ഒ͚
- Derate above 25ഒ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
38
0.3
-55 to +150
300
Units
9
$
$
$
9
P-
$
P-
9QV
:
:
:ഒ
ഒ
ഒ
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
3.3
50
110
Units
ഒ:
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡
1 Page Typical Characteristics
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
12
V = 10V
GS
9
6
V = 20V
GS
3
* Note : T = 25oC
J
0
012345
I , Drain Current[A]
D
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
500
400
300
C
iss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
C
oss
200
* Note ;
1. V = 0 V
GS
2. f = 1 MHz
100
C
rss
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 140V
DS
10
V = 350V
DS
V = 560V
DS
8
6
4
2
* Note : I = 1.6A
D
0
02468
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡
3Pages Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---id--t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
HFU2N70S | N-Channel MOSFET | SemiHow |