|
|
HFU1N70のメーカーはSemiHowです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | HFU1N70 |
| |
部品説明 | N-Channel MOSFET | ||
メーカ | SemiHow | ||
ロゴ | |||
このページの下部にプレビューとHFU1N70ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
Dec 2008
HFD1N70 / HFU1N70
700V N-Channel MOSFET
BVDSS = 700 V
RDS(on) typ = 14.0 Ω
ID = 0.8 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 4.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 14.0 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD1N70
1
2
3
HFU1N70
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
700
0.8
0.5
3.2
±30
33
0.8
3.0
5.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25℃) *
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
30
0.24
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
4.2
50
110
Units
℃/W
◎ SEMIHOW REV.A0,Dec 2008
1 Page Typical Characteristics
Figure 1. On Region Characteristics
80
70
VGS = 10V
60
50 VGS = 20V
40
30
20
10 * Note : TJ = 25oC
0
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
ID , Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
250
Ciss = Cgs + Cgd (Cds = shorted)
C Coss = Cds + Cgd
iss Crss = Cgd
200
150
100 Coss
※ Note ;
Crss
1. VGS = 0 V
2. f = 1 MHz
50
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = 140V
VDS = 350V
8 VDS = 560V
6
4
2
* Notes : ID = 0.8 A
0
012345
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Dec 2008
3Pages Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
◎ SEMIHOW REV.A0,Dec 2008
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ HFU1N70 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
HFU1N70 | N-Channel MOSFET | SemiHow |